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X
Orsula, G. W.
8  Ergebnisse:
Personensuche X
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1

Further Advances in Chemistry and Technology of Acid-Harden..:

Allen, M.T. ; Calabrese, G.S. ; Lamola, A.A....
Journal of Photopolymer Science and Technology.  4 (1991)  3 - p. 379-387 , 1991
Link: https://doi.org/10.2494/..
 
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2

DUV ANR photoresists: Resist design considerations:

Thackeray, J. W. ; Orsula, G. W. ; Canistro, D..
Journal of Photopolymer Science and Technology.  3 (1990)  3 - p. 401-415 , 1990
Link: https://doi.org/10.2494/..
 
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3

Bias printing of APSM resists for 180 nm contact holes:

Teng, G. ; Prokopowicz, G. ; Kang, D....
Microelectronic Engineering.  53 (2000)  1-4 - p. 457-460 , 2000
Link: https://doi.org/10.1016/..
 
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4

Development of APSM resists for sub-200nm contact holes:

Rajaratnam, M. ; Reilly, M. ; Pai, D....
Microelectronic Engineering.  46 (1999)  1-4 - p. 345-348 , 1999
Link: https://doi.org/10.1016/..
 
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5

The Development of Chemically Amplified Positive- and Negat..:

Thackeray, James W. ; Adams, Timothy ; Cronin, Michael F....
Journal of Photopolymer Science and Technology.  7 (1994)  3 - p. 619-630 , 1994
Link: https://doi.org/10.2494/..
 
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6

Deep UV photoresists: Photospeed, resolution, and environme..:

Thackeray, James W. ; Adams, Timothy ; Fedynyshyn, Theodore H....
Journal of Photopolymer Science and Technology.  6 (1993)  4 - p. 645-656 , 1993
Link: https://doi.org/10.2494/..
 
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7

Some resists based on chemically-amplified crosslinking of ..:

Bohland, John F. ; Calabrese, Gary S. ; Cronin, Michael F....
Journal of Photopolymer Science and Technology.  3 (1990)  3 - p. 355-373 , 1990
Link: https://doi.org/10.2494/..
 
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8

Evaluation of deep UV ANR photoresists for 248.4 nm. excime..:

Thackeray, James W. ; Orsula, George W. ; Canistro, Dianne.
Journal of Photopolymer Science and Technology.  2 (1989)  3 - p. 429-443 , 1989
Link: https://doi.org/10.2494/..
 
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