E-LIB Suche - Ergebnisse für: Ortolland, S.

1

Characterization and modelling of layout effects in SiGe ch..:

Berthelon, R. ; Andrieu, F. ; Ortolland, S....
Solid-State Electronics. 128 (2017) - p. 72-79 , 2017

Link: https://doi.org/10.1016/..

2

Enhanced nitrogen diffusion in 4H-SiC:

Phelps, G. J. ; Wright, N. G. ; Chester, E. G....
Applied Physics Letters. 80 (2002) 2 - p. 228-230 , 2002

Link: https://doi.org/10.1063/..

3

TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Tr..:

Adachi, Kazuhiro ; Johnson, C. Mark ; Ortolland, S...
Materials Science Forum. 338-342 (2000) - p. 1419-1422 , 2000

Link: https://doi.org/10.4028/..

4

Low temperature annealing of 4H–SiC Schottky diode edge ter..:

Knights, A. P. ; Lourenço, M. A. ; Homewood, K. P....
Journal of Applied Physics. 87 (2000) 8 - p. 3973-3977 , 2000

Link: https://doi.org/10.1063/..

5

Characterisation of deep level trap centres in 6H-SiC p-n j..:

Ghaffour, K. ; Lauer, V. ; Souifi, A....
Materials Science and Engineering: B. 66 (1999) 1-3 - p. 106-110 , 1999

Link: https://doi.org/10.1016/..

6

Optimisation of a power 4H–SiC SIT device for RF heating ap..:

Ortolland, S ; Johnson, C.M ; Wright, N.G..
Materials Science and Engineering: B. 61-62 (1999) - p. 411-414 , 1999

Link: https://doi.org/10.1016/..

7

Electrical characterization of silicon carbide n+pp+ diodes..:

Raynaud, C. ; Ghaffour, K. ; Ortolland, S....
Journal of Applied Physics. 84 (1998) 6 - p. 3073-3077 , 1998

Link: https://doi.org/10.1063/..

8

Surface effects on current mechanisms in 6H-SiC n+pp+ struc..:

Ortolland, S. ; Raynaud, C. ; Locatelli, M. L...
Journal of Applied Physics. 84 (1998) 3 - p. 1688-1692 , 1998

Link: https://doi.org/10.1063/..

9

Periphery protection for silicon carbide devices: state of ..:

Planson, D. ; Locatelli, M.L. ; Ortolland, S....
Materials Science and Engineering: B. 46 (1997) 1-3 - p. 210-217 , 1997

Link: https://doi.org/10.1016/..

10

Effect of boron diffusion on the high-voltage behavior of 6..:

Ortolland, S. ; Raynaud, C. ; Chante, J. P....
Journal of Applied Physics. 80 (1996) 9 - p. 5464-5468 , 1996

Link: https://doi.org/10.1063/..

11

The negative temperature coefficient of the breakdown volta..:

Lebedev, A, A ; Strel'Chuk, A, M ; Ortolland, S...
hal-02423361. , 1996

Link: https://hal.science/hal-..

12

The negative temperature coefficient of the breakdown volta..:

Lebedev, A ; Strel'chuk, A ; Ortolland, S...
hal-02423361. , 1996

Link: https://hal.archives-ouv..

13

The negative temperature coefficient of the breakdown volta..:

Lebedev, A, A ; Strel'Chuk, A, M ; Ortolland, S...
hal-02423361. , 1996

Link: https://hal.science/hal-..

14

The negative temperature coefficient of the breakdown volta..:

Lebedev, A, A ; Strel'Chuk, A, M ; Ortolland, S...
hal-02423361. , 1996

Link: https://hal.science/hal-..

15

The negative temperature coefficient of the breakdown volta..:

Lebedev, A, A ; Strel'Chuk, A, M ; Ortolland, S...
hal-02423361. , 1996

Link: https://hal.science/hal-..