E-LIB Suche - Ergebnisse für: Ortsiefer, Markus

1

Far-field, linewidth and thermal characteristics of a high-..:

Paul, Sujoy ; Haidar, Mohammad Tanvir ; Cesar, Julijan...
Optics Express. 24 (2016) 12 - p. 13142 , 2016

Link: https://doi.org/10.1364/..

2

Flip-chip integration of tilted VCSELs onto a silicon photo..:

Lu, Huihui ; Lee, Jun Su ; Zhao, Yan...
Optics Express. 24 (2016) 15 - p. 16258 , 2016

Link: https://doi.org/10.1364/..

3

AlGaInAsPSb-based high-speed short-cavity VCSEL with single..:

Grasse, Christian ; Mueller, Michael ; Gruendl, Tobias...
Journal of Crystal Growth. 370 (2013) - p. 217-220 , 2013

Link: https://doi.org/10.1016/..

4

Quad 14 Gbps L-band VCSEL-based system for WDM migration of..:

Estaran, Jose ; Rodes, Roberto ; Pham, Tien Thang...
Optics Express. 20 (2012) 27 - p. 28524 , 2012

Link: https://doi.org/10.1364/..

5

Modulare Systemkomponenten auf Basis planar-optischer Polym..

Abschlussbericht ; Laufzeit: 1. Mai 2008 - 31. Januar 2011

Neumeyr, Christian ; Ortsiefer, Markus ; Rönneberg, Enno , 2011

Link: http://edok01.tib.uni-ha..

6

Free-Running 1550 nm VCSEL for 107 Gb/s Transmission in 997..:

Prince, Kamau ; Ma, Ming ; Gibbon, Timothy B....
Journal of Optical Communications and Networking. 3 (2011) 5 - p. 399 , 2011

Link: https://doi.org/10.1364/..

7

Vertical‐cavity surface‐emitting laser based digital cohere..:

Rodes, Roberto ; Jensen, Jesper Bevensee ; Zibar, Darko...
Microwave and Optical Technology Letters. 53 (2011) 11 - p. 2462-2464 , 2011

Link: https://doi.org/10.1002/..

8

Comparison of InP- and GaSb-based VCSELs emitting at 2.3 μm..:

Boehm, Gerhard ; Bachmann, Alexander ; Rosskopf, Jürgen...
Journal of Crystal Growth. 323 (2011) 1 - p. 442-445 , 2011

Link: https://doi.org/10.1016/..

9

All-VCSEL based digital coherent detection link for multi G..:

Rodes, Roberto ; Jensen, Jesper Bevensee ; Zibar, Darko...
Optics Express. 18 (2010) 24 - p. 24969 , 2010

Link: https://doi.org/10.1364/..

10

Wavelength modulation spectroscopy with a widely tunable In..:

Hangauer, Andreas ; Chen, Jia ; Strzoda, Rainer..
Optics Letters. 33 (2008) 14 - p. 1566 , 2008

Link: https://doi.org/10.1364/..

11

Growth of InAs-containing quantum wells for InP-based VCSEL..:

Boehm, Gerhard ; Grau, Markus ; Dier, Oliver...
Journal of Crystal Growth. 301-302 (2007) - p. 941-944 , 2007

Link: https://doi.org/10.1016/..

12

Long‐wavelength (λ ≥ 1.3 µm) InGaAlAs–InP vertical‐cavity s..:

Amann, Markus‐Christian ; Ortsiefer, Markus
physica status solidi (a). 203 (2006) 14 - p. 3538-3544 , 2006

Link: https://doi.org/10.1002/..

13

Spektroskopischer Einsatz neuer langwelliger (bis 2 μm) Dio..:

Lackner, Maximilian ; Winter, Franz ; Totschnig, Gerhard...
tm - Technisches Messen. 70 (2003) 6 - p. 294-305 , 2003

Link: https://doi.org/10.1524/..

14

InP-based VCSEL technology covering the wavelength range fr..:

Boehm, Gerhard ; Ortsiefer, Markus ; Shau, Robert...
Journal of Crystal Growth. 251 (2003) 1-4 - p. 748-753 , 2003

Link: https://doi.org/10.1016/..

15

Low-resistance InGa(Al)As Tunnel Junctions for Long Wavelen..:

Markus Ortsiefer, Markus Ortsiefer ; Robert Shau, Robert Shau ; Gerhard Böhm, Gerhard Böhm...
Japanese Journal of Applied Physics. 39 (2000) 4R - p. 1727 , 2000

Link: https://doi.org/10.1143/..