E-LIB Suche - Ergebnisse für: Ostermay, Ina

1

Analysis of Mechanical Strain in AlGaN/GaN HFETs:

Yazdani, Hossein ; Graff, Andreas ; Simon-Najasek, Michél...
physica status solidi (a). 220 (2023) 16 - p. , 2023

Link: https://doi.org/10.1002/..

2

Optically Coherent Nitrogen-Vacancy Defect Centers in Diamo..:

Orphal-Kobin, Laura ; Unterguggenberger, Kilian ; Pregnolato, Tommaso...
Physical Review X. 13 (2023) 1 - p. , 2023

Link: https://doi.org/10.1103/..

3

Highly Robust GaN Power Amplifier at Millimeter-Wave Freque..:

Tsao, Yi-Fan ; Chiu, Ping-Hsun ; Chevtchenko, Serguei...
IEEE Transactions on Electron Devices. 70 (2023) 12 - p. 6244-6249 , 2023

Link: https://doi.org/10.1109/..

4

Heterointegration of mm-Wave InP-HBT Power Amplifier Chiple..:

, In: 2023 18th European Microwave Integrated Circuits Conference (EuMIC),

Yacoub, Hady ; Rausch, Marko ; Stolmacker, Christoph... - p. 169-172 , 2023

Link: https://doi.org/10.23919..

5

Threshold voltage shift induced by intrinsic stress in gate..:

Yazdani, Hossein ; Chevtchenko, Serguei ; Ostermay, Ina.
Semiconductor Science and Technology. 36 (2021) 5 - p. 055018 , 2021

Link: https://doi.org/10.1088/..

6

NiCr resistors for terahertz applications in an InP DHBT pr..:

Stoppel, Dimitri ; Ostermay, Ina ; Hrobak, Michael...
Microelectronic Engineering. 208 (2019) - p. 1-6 , 2019

Link: https://doi.org/10.1016/..

7

Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Tra..:

Weimann, Nils G. ; Johansen, Tom K. ; Stoppel, Dimitri...
IEEE Transactions on Electron Devices. 65 (2018) 9 - p. 3704-3710 , 2018

Link: https://doi.org/10.1109/..

8

Performance study of a 248 GHz voltage controlled hetero-in..:

Hossain, Maruf ; Ostermay, Ina ; Weimann, Nils G....
International Journal of Microwave and Wireless Technologies. 9 (2015) 2 - p. 259-268 , 2015

Link: https://doi.org/10.1017/..

9

Millimeter-wave hetero-integrated sources in InP-on-BiCMOS ..:

Jensen, Thomas ; Al-Sawaf, Thualfiqar ; Lisker, Marco...
International Journal of Microwave and Wireless Technologies. 6 (2014) 3-4 - p. 225-233 , 2014

Link: https://doi.org/10.1017/..

10

(Invited) Combining SiGe BiCMOS and InP Processing in an on..:

Lisker, Marco ; Trusch, Andreas ; Krüger, Andreas...
ECS Transactions. 64 (2014) 6 - p. 177-194 , 2014

Link: https://doi.org/10.1149/..

11

InP-Si BiCMOS Heterointegration Using a Substrate Transfer ..:

Lisker, Marco ; Trusch, Andreas ; Krüger, Andreas...
ECS Transactions. 53 (2013) 3 - p. 245-254 , 2013

Link: https://doi.org/10.1149/..

12

Novel enhanced stressors with graded encapsulated SiGe embe..:

Naumann, Andreas ; Kronholz, Stephan ; Mowry, Anthony...
Materials Science and Engineering: B. 154-155 (2008) - p. 95-97 , 2008

Link: https://doi.org/10.1016/..

13

Optimization of ClusterCarbon™ process parameters for strai..:

Sekar, Karuppanan ; Krull, Wade A. ; Horsky, Thomas N....
Materials Science and Engineering: B. 154-155 (2008) - p. 122-125 , 2008

Link: https://doi.org/10.1016/..

14

Analysis of Mechanical Strain in AlGaN/GaN HFETs:

Yazdani, Hossein ; Graff, Andreas ; Simon-Najasek, Michél...
ISSN:1862-6300. , 2023

Link: https://oa.tib.eu/renate..

15

Optically Coherent Nitrogen-Vacancy Defect Centers in Diamo..:

Orphal-Kobin, Laura ; Unterguggenberger, Kilian ; Pregnolato, Tommaso...
http://edoc.hu-berlin.de/18452/28920. , 2023

Link: http://edoc.hu-berlin.de..