E-LIB Suche - Ergebnisse für: Ousten, J.P.

1

Using of bond-wire resistance as aging indicator of semicon..:

Ibrahim, A. ; Khatir, Z. ; Ousten, J.P....
Microelectronics Reliability. 114 (2020) - p. 113757 , 2020

Link: https://doi.org/10.1016/..

2

Effect of power cycling tests on traps under the gate of Al..:

Elharizi, M. ; Zaki, F. ; Ibrahim, A...
Microelectronics Reliability. 88-90 (2018) - p. 671-676 , 2018

Link: https://doi.org/10.1016/..

3

Analysis of the degradation mechanisms occurring in the top..:

Dornic, N. ; Ibrahim, A. ; Khatir, Z....
Microelectronics Reliability. 88-90 (2018) - p. 462-469 , 2018

Link: https://doi.org/10.1016/..

4

Power cycling issues and challenges of SiC-MOSFET power mod..:

Ibrahim, A. ; Ousten, J.P. ; Lallemand, R..
Microelectronics Reliability. 58 (2016) - p. 204-210 , 2016

Link: https://doi.org/10.1016/..

5

Study of thermal interfaces aging for power electronics app..:

, In: 2011 27th Annual IEEE Semiconductor Thermal Measurement and Management Symposium,

Ousten, J.-P. ; Khatir, Z. ; Menager, L. - p. 10-17 , 2011

Link: https://doi.org/10.1109/..

6

Investigations of thermal interfaces aging under thermal cy..:

Ousten, J.P. ; Khatir, Z.
Microelectronics Reliability. 51 (2011) 9-11 - p. 1830-1835 , 2011

Link: https://doi.org/10.1016/..

7

Degradation behavior of 600V–200A IGBT modules under power ..:

Bouarroudj, M. ; Khatir, Z. ; Ousten, J.P....
Microelectronics Reliability. 47 (2007) 9-11 - p. 1719-1724 , 2007

Link: https://doi.org/10.1016/..

8

Power module lifetime estimation from chip temperature dire..:

Coquery, G. ; Carubelli, S. ; Ousten, J.P....
Microelectronics Reliability. 41 (2001) 9-10 - p. 1695-1700 , 2001

Link: https://doi.org/10.1016/..

9

An original DoE-based tool for silicon photodetectors EoL e..:

Spezzigu, P. ; Bechou, L. ; Quadri, G....
Microelectronics Reliability. 51 (2011) 9-11 - p. 1999-2003 , 2011

Link: https://doi.org/10.1016/..

10

Selective activation of failure mechanisms in packaged doub..:

Deshayes, Y. ; Bord, I. ; Barreau, G....
Microelectronics Reliability. 48 (2008) 8-9 - p. 1354-1360 , 2008

Link: https://doi.org/10.1016/..

11

Reliability investigations of 850 nm silicon photodiodes un..:

Bourqui, M.L. ; Béchou, L. ; Gilard, O....
Microelectronics Reliability. 48 (2008) 8-9 - p. 1202-1207 , 2008

Link: https://doi.org/10.1016/..

12

Failure mechanisms and qualification testing of passive com..:

Post, H.A. ; Letullier, P. ; Briolat, T....
Microelectronics Reliability. 45 (2005) 9-11 - p. 1626-1632 , 2005

Link: https://doi.org/10.1016/..

13

Detection and location of defects in electronic devices by ..:

Angrisani, L. ; Bechou, L. ; Dallet, D...
Measurement. 31 (2002) 2 - p. 77-91 , 2002

Link: https://doi.org/10.1016/..

14

Localization of defects in die-attach assembly by continuou..:

Bechou, L. ; Angrisiani, L. ; Ousten, Y....
Microelectronics Reliability. 39 (1999) 6-7 - p. 1095-1101 , 1999

Link: https://doi.org/10.1016/..

15

Ultrasonic images interpretation improvement for microassem..:

Bechou, L. ; Ousten, Y. ; Tregon, B....
Microelectronics Reliability. 37 (1997) 10-11 - p. 1787-1790 , 1997

Link: https://doi.org/10.1016/..