E-LIB Suche - Ergebnisse für: Pérez-Tomas, A

1

Bipolar self-doping in ultra-wide bandgap spinel ZnGa2O4:

Chi, Z. ; Tarntair, Fu-Gow ; Frégnaux, M....
Materials Today Physics. 20 (2021) - p. 100466 , 2021

Link: https://doi.org/10.1016/..

2

Ultra-high critical electric field of 13.2 MV/cm for Zn-dop..:

Chikoidze, E. ; Tchelidze, T. ; Sartel, C....
Materials Today Physics. 15 (2020) - p. 100263 , 2020

Link: https://doi.org/10.1016/..

3

Gaussian distribution of inhomogeneous nickel–vanadium Scho..:

Soltani, S ; Gammon, P M ; Pérez-Tomas, A..
Semiconductor Science and Technology. 36 (2020) 1 - p. 015020 , 2020

Link: https://doi.org/10.1088/..

4

Giant bulk photovoltaic effect in solar cell architectures ..:

Pérez-Tomás, A. ; Chikoidze, E. ; Dumont, Y....
Materials Today Energy. 14 (2019) - p. 100350 , 2019

Link: https://doi.org/10.1016/..

5

Puzzling robust 2D metallic conductivity in undoped β-Ga2O3..:

Chikoidze, E. ; Rogers, D.J. ; Teherani, F.H....
Materials Today Physics. 8 (2019) - p. 10-17 , 2019

Link: https://doi.org/10.1016/..

6

Improved Channel Mobility by Oxide Nitridation for N-Channe..:

Li, Fan ; Sharma, Yogesh K. ; Jennings, Michael R....
Materials Science Forum. 858 (2016) - p. 667-670 , 2016

Link: https://doi.org/10.4028/..

7

High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on S..:

Sharma, Y. K. ; Li, F. ; Jennings, M. R....
Journal of Electronic Materials. 44 (2015) 11 - p. 4167-4174 , 2015

Link: https://doi.org/10.1007/..

8

Fabrication of 3C-SiC MOS Capacitors Using High-Temperature..:

Sharma, Yogesh K. ; Li, Fan ; Fisher, C.A....
Materials Science Forum. 821-823 (2015) - p. 464-467 , 2015

Link: https://doi.org/10.4028/..

9

Simulations of a Lateral PiN Diode on Si/SiC Substrate for ..:

Chan, Chun W. ; Gammon, Peter Michael ; Shah, Vishal Ajit...
Materials Science Forum. 821-823 (2015) - p. 624-627 , 2015

Link: https://doi.org/10.4028/..

10

Gate traps inducing band-bending fluctuations on AlGaN/GaN ..:

Pérez-Tomás, A. ; Fontserè, A. ; Sánchez, S....
Applied Physics Letters. 102 (2013) 2 - p. , 2013

Link: https://doi.org/10.1063/..

11

Molecular beam epitaxial AlGaN/GaN high electron mobility t..:

Fontserè, A. ; Pérez-Tomás, A. ; Placidi, M....
Applied Physics Letters. 102 (2013) 9 - p. , 2013

Link: https://doi.org/10.1063/..

12

Analysis of the AlGaN/GaN vertical bulk current on Si, sapp..:

Pérez-Tomás, A. ; Fontserè, A. ; Llobet, J....
Journal of Applied Physics. 113 (2013) 17 - p. , 2013

Link: https://doi.org/10.1063/..

13

Modeling the effect of thin gate insulators (SiO2, SiN, Al2..:

Pérez-Tomás, A. ; Fontserè, A. ; Jennings, M.R..
Materials Science in Semiconductor Processing. 16 (2013) 5 - p. 1336-1345 , 2013

Link: https://doi.org/10.1016/..

14

Modelling the inhomogeneous SiC Schottky interface:

Gammon, P. M. ; Pérez-Tomás, A. ; Shah, V. A....
Journal of Applied Physics. 114 (2013) 22 - p. , 2013

Link: https://doi.org/10.1063/..

15

Gate current analysis of AlGaN/GaN on silicon heterojunctio..:

Fontserè, A. ; Pérez-Tomás, A. ; Placidi, M....
Applied Physics Letters. 101 (2012) 9 - p. 093505 , 2012

Link: https://doi.org/10.1063/..