Pągowska, K.D.
16  Ergebnisse:
Personensuche X
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2

Comparison of defect structure in Si and Ge ion implanted G..:

Pągowska, K.D. ; Kozubal, M. ; Taube, A....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  444 (2019)  - p. 74-79 , 2019
 
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3

Analysis of defect structure in GaN epilayers doped with im..:

Pągowska, K.D. ; Kozubal, M. ; Taube, A....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  450 (2019)  - p. 248-251 , 2019
 
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5

Proton implantation for the isolation of AlGaAs/GaAs quantu..:

Szerling, A ; Kosiel, K ; Kozubal, M...
Semiconductor Science and Technology.  31 (2016)  7 - p. 075010 , 2016
 
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6

Nanocrystalline sputter-deposited ZnMgO:Al transparent p-ty..:

Borysiewicz, M.A. ; Wzorek, M. ; Gołaszewska, K....
Materials Science and Engineering: B.  200 (2015)  - p. 93-98 , 2015
 
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7

Monte Carlo simulations of ion channeling in crystals conta..:

Turos, A. ; Nowicki, L. ; Stonert, A....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  268 (2010)  11-12 - p. 1718-1722 , 2010
 
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8

Defect studies in ion irradiated AlGaN:

Jagielski, J. ; Thomé, L. ; Zhang, Y....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  268 (2010)  11-12 - p. 2056-2059 , 2010
 
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11

Channeling study of thermal decomposition of III-N compound..:

Stonert, A. ; Pągowska, K. ; Ratajczak, R....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  266 (2008)  8 - p. 1224-1228 , 2008
 
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12

Nitrogen sublattice analysis in GaN by non-Rutherford He-io..:

Turos, A. ; Ratajczak, R. ; Pągowska, K....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  266 (2008)  8 - p. 1897-1902 , 2008
 
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