E-LIB Suche - Ergebnisse für: Paine, B. M.

1

Ka-band InP high electron mobility transistor monolithic mi..:

Paine, B.M ; Wong, R.C ; Schmitz, A.E...
Microelectronics Reliability. 41 (2001) 8 - p. 1115-1122 , 2001

2

Reliability and failure criteria for AlInAs/GaInAs/InP HBTs:

, In: Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107),

Kiziloglu, K. ; Thomas, S. ; Williams, F.. - p. 294,295,296,297 , 2000

Link: https://doi.org/10.1109/..

3

Growth and diffusion of abrupt beryllium-doped profiles in ..:

Tejwani, M. J. ; Kanber, H. ; Paine, B. M..
Applied Physics Letters. 53 (1988) 24 - p. 2411-2413 , 1988

Link: https://doi.org/10.1063/..

4

Strain in GaAs by low-dose ion implantation:

Paine, B. M. ; Hurvitz, N. N. ; Speriosu, V. S.
Journal of Applied Physics. 61 (1987) 4 - p. 1335-1339 , 1987

Link: https://doi.org/10.1063/..

5

Nonlinear strain effects in ion-implanted GaAs:

Paine, B. M. ; Speriosu, V. S.
Journal of Applied Physics. 62 (1987) 5 - p. 1704-1709 , 1987

Link: https://doi.org/10.1063/..

6

Ion beam mixing: Basic experiments:

Paine, B.M. ; Averback, R.S.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 7-8 (1985) - p. 666-675 , 1985

Link: https://doi.org/10.1016/..

7

Ion mixing of markers in SiO2 and Si:

Barcz, A. J. ; Paine, B. M. ; Nicolet, M-A.
Applied Physics Letters. 44 (1984) 1 - p. 45-47 , 1984

Link: https://doi.org/10.1063/..

8

Shifts of dilute Pt impurities in amorphous Si by ion irrad..:

Paine, B.M. ; Nicolet, M.-A.
Nuclear Instruments and Methods in Physics Research. 209-210 (1983) - p. 173-177 , 1983

Link: https://doi.org/10.1016/..

9

Accelerator energy calibration using nonresonant nuclear re..:

Scott, D.M. ; Paine, B.M.
Nuclear Instruments and Methods in Physics Research. 218 (1983) 1-3 - p. 154-158 , 1983

Link: https://doi.org/10.1016/..

10

Ion Mixing of Ni and Pt Layers on Si:

Wieluński, L. S. ; Paine, B. M. ; Liu, B. X...
physica status solidi (a). 72 (1982) 1 - p. 399-404 , 1982

Link: https://doi.org/10.1002/..

11

X-ray rocking curve study of Si-implanted GaAs, Si, and Ge:

Speriosu, V. S. ; Paine, B. M. ; Nicolet, M-A..
Applied Physics Letters. 40 (1982) 7 - p. 604-606 , 1982

Link: https://doi.org/10.1063/..

12

Impurity profile broadening and shifts by ion beam mixing:

Paine, B. M.
Journal of Applied Physics. 53 (1982) 10 - p. 6828-6833 , 1982

Link: https://doi.org/10.1063/..

13

Ion beam mixing in amorphous silicon II. Theoretical interp..:

Matteson, S. ; Paine, B.M. ; Nicolet, M.-A.
Nuclear Instruments and Methods. 182-183 (1981) - p. 53-61 , 1981

Link: https://doi.org/10.1016/..

14

Comparison of kinematic X-ray diffraction and backscatterin..:

Paine, B.M. ; Speriosu, V.S. ; Wieluński, L.S...
Nuclear Instruments and Methods in Physics Research. 191 (1981) 1-3 - p. 80-86 , 1981

Link: https://doi.org/10.1016/..

15

Ion beam mixing in amorphous silicon I. Experimental invest..:

Matteson, S. ; Paine, B.M. ; Grimaldi, M.G...
Nuclear Instruments and Methods. 182-183 (1981) - p. 43-51 , 1981

Link: https://doi.org/10.1016/..