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X
Pakfar, A.
33  Ergebnisse:
Personensuche X
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1

Modeling boron dose loss in sidewall spacer stacks of compl..:

Essa, Z. ; Pelletier, B. ; Morin, P....
Solid-State Electronics.  126 (2016)  - p. 163-169 , 2016
Link: https://doi.org/10.1016/..
 
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2

Extended Point Defects in Crystalline Materials: Ge and Si:

Cowern, N. E. B. ; Simdyankin, S. ; Ahn, C....
Physical Review Letters.  110 (2013)  15 - p. , 2013
Link: https://doi.org/10.1103/..
 
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3

Enthalpy based modeling of pulsed excimer laser annealing f..:

Hackenberg, M. ; Pichler, P. ; Huet, K....
Applied Surface Science.  258 (2012)  23 - p. 9347-9351 , 2012
Link: https://doi.org/10.1016/..
 
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4

Evaluation and modeling of lanthanum diffusion in TiN/La2O3..:

Essa, Z. ; Gaumer, C. ; Pakfar, A....
Applied Physics Letters.  101 (2012)  18 - p. , 2012
Link: https://doi.org/10.1063/..
 
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5

Characterization and modeling of structural properties of S..:

Py, M. ; Barnes, J. P. ; Rivallin, P....
Journal of Applied Physics.  110 (2011)  4 - p. , 2011
Link: https://doi.org/10.1063/..
 
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6

Transfer of physically-based models from process to device ..:

Bazizi, E.M. ; Pakfar, A. ; Fazzini, P.F....
Thin Solid Films.  518 (2010)  9 - p. 2427-2430 , 2010
Link: https://doi.org/10.1016/..
 
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7

Effect of Germanium content and strain on the formation of ..:

Fazzini, P.F. ; Cristiano, F. ; Talbot, E....
Thin Solid Films.  518 (2010)  9 - p. 2338-2341 , 2010
Link: https://doi.org/10.1016/..
 
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8

Modeling of the effect of the buried Si–SiO2 interface on t..:

Bazizi, E. M. ; Fazzini, P. F. ; Pakfar, A....
Journal of Applied Physics.  107 (2010)  7 - p. , 2010
Link: https://doi.org/10.1063/..
 
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9

Modelling of Boron Trapping at End-of-Range defects in pre-..:

Bazizi, E.M. ; Fazzini, P.F. ; Zechner, C....
Materials Science and Engineering: B.  154-155 (2008)  - p. 275-278 , 2008
Link: https://doi.org/10.1016/..
 
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10

Experimental investigations and simulation of the deactivat..:

Martinez-Limia, A. ; Pichler, P. ; Lerch, W....
Materials Science and Engineering: B.  154-155 (2008)  - p. 211-215 , 2008
Link: https://doi.org/10.1016/..
 
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11

Dopant diffusion in SiGe: modeling stress and Ge chemical e..:

Pakfar, A
Materials Science and Engineering: B.  89 (2002)  1-3 - p. 225-228 , 2002
Link: https://doi.org/10.1016/..
 
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12

Expressions of pathologic markers in PRP based chondrogenic..:

Pakfar, Arezou ; Irani, Shiva ; Hanaee-Ahvaz, Hana
Tissue and Cell.  49 (2017)  1 - p. 122-130 , 2017
Link: https://doi.org/10.1016/..
 
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13

Using Intelligent Educational Technology in Computer Networ:

Beheshti, Mobina ; Pakfar, Amir
Procedia - Social and Behavioral Sciences.  116 (2014)  - p. 2994-2997 , 2014
Link: https://doi.org/10.1016/..
 
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14

Precipitation of Antimony Implanted into Silicon:

Koffel, Stephane ; Pichler, Peter ; Reading, Michael A....
ECS Transactions.  41 (2012)  34 - p. 9-17 , 2012
Link: https://doi.org/10.1149/..
 
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15

Continuum simulation of solid phase epitaxial regrowth of a..:

Delalleau, Julien ; Pakfar, Ardechir ; Bazizi, El-Medhi..
physica status solidi (a).  208 (2010)  3 - p. 608-611 , 2010
Link: https://doi.org/10.1002/..
 
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