E-LIB Suche - Ergebnisse für: Palmieri, Rodrigo

1

SiO2/SiC Interfacial Region: Presence of Silicon Oxycarbide..:

Stedile, Fernanda Chiarello ; Radtke, Cláudio ; Soares, Gabriel Vieira...
Materials Science Forum. 717-720 (2012) - p. 747-752 , 2012

Link: https://doi.org/10.4028/..

2

Effect of H2O2 in passivation of n‐ and p‐type 4H‐SiC surfa..:

Palmieri, Rodrigo ; Radtke, Cláudio ; Boudinov, Henri.
physica status solidi (a). 209 (2012) 4 - p. 675-678 , 2012

Link: https://doi.org/10.1002/..

3

Improvement in the SiO2/4H-SiC Interfacial Region by Therma..:

Pitthan, Eduardo ; Corrêa, Silma A. ; Palmieri, Rodrigo...
Materials Science Forum. 717-720 (2012) - p. 753-756 , 2012

Link: https://doi.org/10.4028/..

4

Effect of Reoxidations and Thermal Treatments with Hydrogen..:

Pitthan, Eduardo ; Corre^a, Silma A. ; Palmieri, Rodrigo...
Electrochemical and Solid-State Letters. 14 (2011) 9 - p. H368 , 2011

Link: https://doi.org/10.1149/..

5

The role played in the improvement of the SiO2/SiC interfac..:

Pitthan Filho, Eduardo ; Palmieri, Rodrigo ; Corrêa, Silma Alberton...
ECS Solid State Letters. New Jersey. Vol. 2, no. 1 (2013), p. P8-P10. , 2013

Link: http://hdl.handle.net/10..

6

Influence of thermal growth parameters on the SiO2/4H-SiC i..:

Pitthan Filho, Eduardo ; Lopes, L. D ; Palmieri, Rodrigo...
APL Materials. New York. Vol. 1, no. 2 (Aug. 2013), p. 022101-022107. , 2013

Link: http://hdl.handle.net/10..

7

SiO2 films on 4H-SiC : reducing interface electrical degrad..:

Pitthan Filho, Eduardo ; Corrêa, Silma Alberton ; Palmieri, Rodrigo...
Brazilian-German Workshop on Applied Surface Science (8. : 2013 Sept. 15-20 : Bamberg, Alemanha). Book of Abstracts. [S.l. : s.n., 2013]. , 2013

Link: http://hdl.handle.net/10..

8

The role played in the improvement of the SiO2/SiC interfac..:

Pitthan Filho, Eduardo ; Palmieri, Rodrigo ; Corrêa, Silma Alberton...
ECS Solid State Letters. New Jersey. Vol. 2, no. 1 (2013), p. P8-P10. , 2013

Link: http://hdl.handle.net/10..

9

SiO2 films on 4H-SiC : reducing interface electrical degrad..:

Pitthan Filho, Eduardo ; Corrêa, Silma Alberton ; Palmieri, Rodrigo...
Brazilian-German Workshop on Applied Surface Science (8. : 2013 Sept. 15-20 : Bamberg, Alemanha). Book of Abstracts. [S.l. : s.n., 2013]. , 2013

Link: http://hdl.handle.net/10..

10

Caracterização elétrica e físico-química de estruturas diel..:

Palmieri, Rodrigo
http://hdl.handle.net/10183/18412. , 2009

Link: http://hdl.handle.net/10..

11

Caracterização elétrica e físico-química de estruturas diel..:

Palmieri, Rodrigo , 2009

Link: http://hdl.handle.net/10..

12

Improvement of SiO2/4H-SiC interface properties by oxidatio..:

Palmieri, Rodrigo ; Radtke, Claudio ; Boudinov, Henri Ivanov.
Applied physics letters. New York. Vol. 95, no. 11 (Sept. 2009), 113504, 3 p.. , 2009

Link: http://hdl.handle.net/10..

13

Medida elétrica de defeitos eletricamente ativos na interfa..:

Contini, André Carlos ; Palmieri, Rodrigo ; Radtke, Claudio
Salão de Iniciação Científica (18. : 2006 : Porto Alegre). Livro de resumos. Porto Alegre : UFRGS, 2006.. , 2006

Link: http://hdl.handle.net/10..

14

Medida elétrica de defeitos eletricamente ativos na interfa..:

Contini, André Carlos ; Palmieri, Rodrigo ; Radtke, Claudio
Salão de Iniciação Científica (18. : 2006 : Porto Alegre). Livro de resumos. Porto Alegre : UFRGS, 2006.. , 2006

Link: http://hdl.handle.net/10..

15

Caracterização elétrica de estruturas metal/dielétrico high..:

Palmieri, Rodrigo , 2005

Link: http://hdl.handle.net/10..