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Panciera, F.
59  Ergebnisse:
Personensuche X
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1

Introducing 2D Materials in Magnetic Tunnel Junctions:

, In: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC),
Dlubak, Bruno ; Zatko, V. ; Dubois, S. M.-M.... - p. 159-159 , 2023
Link: https://doi.org/10.1109/..
 
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2

Lateral growth of NiSi at the θ-Ni2Si/Si(100) interface: Ex..:

Mangelinck, D. ; El Kousseifi, M. ; Hoummada, K...
Microelectronic Engineering.  199 (2018)  - p. 45-51 , 2018
Link: https://doi.org/10.1016/..
 
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3

In-Situ TEM Investigation of Controlled VLS Silicon Nanowir..:

Alam, S.B. ; Panciera, F. ; Norton, M.M...
Microscopy and Microanalysis.  22 (2016)  S5 - p. 60-61 , 2016
Link: https://doi.org/10.1017/..
 
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4

Synthesis of nanostructures in nanowires using sequential c..:

Panciera, F. ; Chou, Y.-C. ; Reuter, M. C....
Nature Materials.  14 (2015)  8 - p. 820-825 , 2015
Link: https://doi.org/10.1038/..
 
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5

Building and Imaging Silicide Nanostructures in Nanowires:

Panciera, F. ; Chou, Y.-C. ; Reuter, M. C....
Microscopy and Microanalysis.  21 (2015)  S3 - p. 1505-1506 , 2015
Link: https://doi.org/10.1017/..
 
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6

Progress in the understanding of Ni silicide formation for ..:

Mangelinck, D. ; Hoummada, K. ; Panciera, F....
physica status solidi (a).  211 (2014)  1 - p. 152-165 , 2014
Link: https://doi.org/10.1002/..
 
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7

Atom probe tomography for advanced metallization:

Mangelinck, D. ; Panciera, F. ; Hoummada, K....
Microelectronic Engineering.  120 (2014)  - p. 19-33 , 2014
Link: https://doi.org/10.1016/..
 
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8

Ni(Pt)-silicide contacts on CMOS devices: Impact of substra..:

Panciera, F. ; Hoummada, K. ; Perrin, C....
Microelectronic Engineering.  120 (2014)  - p. 34-40 , 2014
Link: https://doi.org/10.1016/..
 
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9

Ni silicide nanowires analysis by atom probe tomography:

El Kousseifi, M. ; Panciera, F. ; Hoummada, K....
Microelectronic Engineering.  120 (2014)  - p. 47-51 , 2014
Link: https://doi.org/10.1016/..
 
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10

Pt redistribution in N-MOS transistors during Ni salicide p..:

Panciera, F. ; Hoummada, K. ; Gregoire, M...
Microelectronic Engineering.  107 (2013)  - p. 173-177 , 2013
Link: https://doi.org/10.1016/..
 
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11

Atom probe tomography of SRAM transistors: Specimen prepara..:

Panciera, F. ; Hoummada, K. ; Gregoire, M....
Microelectronic Engineering.  107 (2013)  - p. 167-172 , 2013
Link: https://doi.org/10.1016/..
 
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12

Three-dimensional distribution of Al in high-k metal gate: ..:

Panciera, F. ; Baudot, S. ; Hoummada, K....
Applied Physics Letters.  100 (2012)  20 - p. , 2012
Link: https://doi.org/10.1063/..
 
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13

Investigation of fluorine three-dimensional redistribution ..:

Panciera, F. ; Hoummada, K. ; Mastromatteo, M....
Applied Physics Letters.  101 (2012)  10 - p. 103113 , 2012
Link: https://doi.org/10.1063/..
 
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14

Evaluation and modeling of lanthanum diffusion in TiN/La2O3..:

Essa, Z. ; Gaumer, C. ; Pakfar, A....
Applied Physics Letters.  101 (2012)  18 - p. , 2012
Link: https://doi.org/10.1063/..
 
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15

Three dimensional distributions of arsenic and platinum wit..:

Panciera, F. ; Hoummada, K. ; Gregoire, M....
Applied Physics Letters.  99 (2011)  5 - p. , 2011
Link: https://doi.org/10.1063/..
 
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