E-LIB Suche - Ergebnisse für: Paranthoen, C.

1

Quantum dot membrane external-cavity surface-emitting laser..:

Phung, H.-M. ; Tatar-Mathes, P. ; Paranthoën, C....
Applied Physics Letters. 118 (2021) 23 - p. , 2021

Link: https://doi.org/10.1063/..

2

3.3 µm interband-cascade resonant-cavity light-emitting dio..:

Díaz-Thomas, D A ; Stepanenko, O ; Bahriz, M...
Semiconductor Science and Technology. 35 (2020) 12 - p. 125029 , 2020

Link: https://doi.org/10.1088/..

3

InAs/InP quantum dot VECSEL emitting at 1.5 μm:

Nechay, K. ; Mereuta, A. ; Paranthoen, C....
Applied Physics Letters. 115 (2019) 17 - p. , 2019

Link: https://doi.org/10.1063/..

4

InP-based devices integrating liquid crystals microcells fo..:

, In: 2019 Compound Semiconductor Week (CSW),

Levallois, C. ; Boisnard, B. ; Paranthoen, C.... - p. 1-2 , 2019

Link: https://doi.org/10.1109/..

5

23 and 39 GHz low phase noise monosection InAs/InP (113)B q..:

Klaime, K. ; Calò, C. ; Piron, R....
Optics Express. 21 (2013) 23 - p. 29000 , 2013

Link: https://doi.org/10.1364/..

6

Enhancement of the polarization stability of a 155 µm emitt..:

Gauthier, J.-P. ; Paranthoën, C. ; Levallois, C....
Optics Express. 20 (2012) 15 - p. 16832 , 2012

Link: https://doi.org/10.1364/..

7

Oxide-confined mid-infrared VCSELs:

Laaroussi, Y. ; Almuneau, G. ; Rumeau, A....
Electronics Letters. 48 (2012) 25 - p. 1616-1618 , 2012

Link: https://doi.org/10.1049/..

8

Thermal conductivity of InAs quantum dot stacks using AlAs ..:

Salman, S. ; Folliot, H. ; Le Pouliquen, J....
Materials Science and Engineering: B. 177 (2012) 11 - p. 882-886 , 2012

Link: https://doi.org/10.1016/..

9

Sputtered hydrogenated amorphous silicon thin films for dis..:

Shuaib, A. ; Levallois, C. ; Gauthier, J.P....
Thin Solid Films. 519 (2011) 18 - p. 6178-6182 , 2011

Link: https://doi.org/10.1016/..

10

Tunable semiconductor vertical-cavity surface-emitting lase..:

Castany, O. ; Dupont, L. ; Shuaib, A....
Applied Physics Letters. 98 (2011) 16 - p. , 2011

Link: https://doi.org/10.1063/..

11

Polarization control of 1.6 μm vertical-cavity surface-emit..:

Lamy, J. M. ; Paranthoen, C. ; Levallois, C....
Applied Physics Letters. 95 (2009) 1 - p. , 2009

Link: https://doi.org/10.1063/..

12

Design of an InGaAs/InP 1.55 μm electrically pumped VCSEL:

Lamy, J.-M. ; Boyer-Richard, S. ; Levallois, C....
Optical and Quantum Electronics. 40 (2008) 14-15 - p. 1193-1198 , 2008

Link: https://doi.org/10.1007/..

13

Negative characteristic temperature of long wavelength InAs..:

Alghoraibi, I. ; Rohel, T. ; Piron, R....
Applied Physics Letters. 91 (2007) 26 - p. , 2007

Link: https://doi.org/10.1063/..

14

Characterization of InAs quantum wires on (001)InP: toward ..:

Lamy, J.‐M. ; Levallois, C. ; Nakhar, A....
physica status solidi (a). 204 (2007) 6 - p. 1672-1676 , 2007

Link: https://doi.org/10.1002/..

15

Increase of charge-carrier redistribution efficiency in a l..:

Cornet, C. ; Hayne, M. ; Caroff, P....
Physical Review B. 74 (2006) 24 - p. , 2006

Link: https://doi.org/10.1103/..