E-LIB Suche - Ergebnisse für: Park, Daegyu

1

G-quadruplexes formed by Varicella-Zoster virus reiteration..:

Chung, Woo-Chang ; Ravichandran, Subramaniyam ; Park, Daegyu...
PLOS Pathogens. 19 (2023) 1 - p. e1011095 , 2023

Link: https://doi.org/10.1371/..

2

Prospects of High-Ge-Content Strained SiGe for Advanced Fin..:

Hashemi, Pouya ; Balakrishnan, Karthik ; Ando, Takashi...
ECS Transactions. 75 (2016) 8 - p. 39-50 , 2016

Link: https://doi.org/10.1149/..

3

(Invited) Strained-SiGe Channel FinFETs for High-Performanc..:

Hashemi, Pouya ; Balakrishnan, Karthik ; Ott, John A....
ECS Transactions. 66 (2015) 4 - p. 17-30 , 2015

Link: https://doi.org/10.1149/..

4

Plasma Post-Oxidation for High Mobility Strained-Ge pFETs w..:

Chern, Winston ; Hashemi, Pouya ; Kobayashi, Masaharu..
ECS Transactions. 64 (2014) 6 - p. 329-335 , 2014

Link: https://doi.org/10.1149/..

5

(Invited) Strained SiGe on Insulator FinFETs: a P-FET Candi..:

Hashemi, Pouya ; Balakrishnan, Karthik ; Majumdar, Amlan...
ECS Transactions. 64 (2014) 6 - p. 545-556 , 2014

Link: https://doi.org/10.1149/..

6

A Self-Aligned Sacrificial Emitter Process for High Perform..:

Liu, Q.Z. ; Adkisson, James ; Benoit, John...
ECS Transactions. 50 (2013) 9 - p. 121-127 , 2013

Link: https://doi.org/10.1149/..

7

Leakage Engineering Enabling PDSOI Ring Oscillators Operati..:

Ren, Zhibin ; Cai, Jin ; Robison, Robert R....
ECS Transactions. 34 (2011) 1 - p. 31-36 , 2011

Link: https://doi.org/10.1149/..

8

(Invited) High-k Gate Dielectrics for Nanoscale CMOS Device..:

Park, Dae-Gyu ; Wang, Xinlin
ECS Transactions. 28 (2010) 2 - p. 39-50 , 2010

Link: https://doi.org/10.1149/..

9

Challenges in FEOL Logic Device Integration for 32 nm Techn..:

Park, Dae-Gyu ; Chudzik, Mike ; Yin, Haizhou
ECS Transactions. 11 (2007) 6 - p. 371-377 , 2007

Link: https://doi.org/10.1149/..

10

Effects of fluorine and chlorine on the gate oxide integrit..:

Park, Dae-Gyu ; Kim, Tae-Kyun
Thin Solid Films. 483 (2005) 1-2 - p. 232-238 , 2005

Link: https://doi.org/10.1016/..

11

Investigation of stress behaviors and mechanism of void for..:

Suh, You-Seok ; Park, Dae-Gyu ; Jang, Se-Aug
Thin Solid Films. 450 (2004) 2 - p. 341-345 , 2004

Link: https://doi.org/10.1016/..

12

Epitaxial C49–TiSi2 phase formation on the silicon (100):

Yang, Jun-Mo ; Park, Ju-Chul ; Park, Dae-Gyu...
Journal of Applied Physics. 94 (2003) 6 - p. 4198-4202 , 2003

Link: https://doi.org/10.1063/..

13

Characteristics of Multiple Thickness Gate Oxides Using Oxi..:

Cho, Heung-Jae ; Lim, Kwan-Yong ; Lee, Jeong-Youb...
Japanese Journal of Applied Physics. 42 (2003) Part 1, No. 4B - p. 1919-1923 , 2003

Link: https://doi.org/10.1143/..

14

Liner schemes of the aluminum damascene interconnection for..:

Kim, Sam-Dong ; Park, Dae-Gyu
Solid-State Electronics. 47 (2003) 10 - p. 1875-1879 , 2003

Link: https://doi.org/10.1016/..

15

Impact of atomic-layer-deposited TiN on the gate oxide qual..:

Park, Dae-Gyu ; Lim, Kwan-Yong ; Cho, Heung-Jae...
Applied Physics Letters. 80 (2002) 14 - p. 2514-2516 , 2002

Link: https://doi.org/10.1063/..