Park, Min Hyuk
11944  Ergebnisse:
Personensuche X
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2

Ferroelectricity of Hf0.5Zr0.5O2 Thin Film Induced at 350°C..:

Lee, Jaewook ; Kim, Se Hyun ; Choi, Hyojun...
IEEE Transactions on Electron Devices.  71 (2024)  4 - p. 2690-2695 , 2024
 
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3

Effect of Annealing Temperature on Minimum Domain Size of F..:

Yun, Seokjung ; Kim, Hoon ; Seo, Myungsoo...
ACS Applied Electronic Materials.  6 (2024)  4 - p. 2134-2141 , 2024
 
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4

Hafnia-Based Ferroelectric Memory: Device Physics Strongly ..:

Choi, Hyojun ; Cho, Yong Hyeon ; Kim, Se Hyun..
The Journal of Physical Chemistry Letters.  15 (2024)  4 - p. 983-997 , 2024
 
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6

Exploring the role of TiN electrodes in the formation of fe..:

Kim, Sojin ; Lee, Jaewook ; Seo, Jong Hyeok...
Journal of the Korean Ceramic Society.  61 (2024)  2 - p. 327-334 , 2024
 
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7

Non-centrosymmetric crystallization in ferroelectric hafniu..:

Lee, Sangwoo ; Choi, Jun-Gyu ; Kim, Se Hyun...
Materials Science and Engineering: R: Reports.  159 (2024)  - p. 100800 , 2024
 
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10

Effect of stress on fluorite-structured ferroelectric thin ..:

Lee, Younghwan ; Jeong, Hyun Woo ; Kim, Se Hyun..
Materials Science in Semiconductor Processing.  160 (2023)  - p. 107411 , 2023
 
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11

Wake-up-mitigated giant ferroelectricity in Hf0.5Zr0.5O2 th..:

Yang, Kun ; Kim, Gi-Yeop ; Ryu, Jin Joo...
Materials Science in Semiconductor Processing.  164 (2023)  - p. 107565 , 2023
 
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13

Hafnia-based Ferroelectric Memory: Device Physics Strongly ..:

, In: 2023 International Conference on IC Design and Technology (ICICDT),
Park, Min Hyuk - p. xx-xx , 2023
 
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15

Examination of Ferroelectric FET for "Cold" Nonvolatile Mem..:

Kuk, Song-Hyeon ; Han, Seung-Min ; Kim, Bong Ho...
IEEE Transactions on Electron Devices.  70 (2023)  8 - p. 4122-4127 , 2023
 
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