Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren
Datenschutzerklärungen
.
X
Login
Merkliste (
0
)
Startseite
Über uns
Startseite Über uns
Neues aus der SuUB
Geschichte der SuUB
Bibliotheksprofil
Presseinformationen
Freundeskreis
Die Bibliothek in Zahlen
Ausstellungen
Projekte
Ausbildung, Praktika und Stellenangebote
Filme zur Staats- und Universitätsbibliothek Bremen
Service & Beratung
Startseite Service & Beratung
Ausleihe & Fernleihe
Rückgabe & Verlängerung
Schulungen & Führungen
Mein Bibliothekskonto
Bibliotheksausweis
Neu in der Bibliothek?
Informationsmaterialien, Formulare und Pläne zum Download
Öffnungszeiten
Lernort Bibliothek
PC, WLAN, Kopieren, Scannen, Drucken
Kataloge & Sammlungen
Startseite Kataloge & Sammlungen
Historische Sammlungen
Digitale Sammlungen
Fachinformationen
Standorte
Startseite Standorte
Zentrale
Juridicum
Bereichsbibliothek Wirtschaftswissenschaft
Bereichsbibliothek Physik / Elektrotechnik
Teilbibliothek Technik und Sozialwesen
Teilbibliothek Wirtschaft und Nautik
Teilbibliothek Musik
Teilbibliothek Kunst
Teilbibliothek Bremerhaven
Kontakt
Startseite Kontakt
Liste der Ansprechpartner
Open Access & Publizieren
Startseite Open Access & Publizieren
Literaturverwaltung
Literatur Publizieren
Open Access in Bremen
Toggle navigation
Park, P.Y. ( author )
44
Ergebnisse:
Personensuche
X
Format
Online (44)
Medientypen
Artikel (Online) (2)
OpenAccess-Volltexte (42)
Sortierung: Relevanz
Sortierung: Jahr
?
1
Etch characteristics of HfO 2 films on Si substrates:
Department of Materials Science and Engineering, University of Florida, P.O. Box 116400 Rhines Hall, Gainesville, FL 32611, USA ( host institution )
;
Norasetthekul, S. ( author )
;
Park, P.Y. ( author )
...
Applied Surface Science. , 2002
Link:
https://doi.org/10.1016/..
?
2
Dry etch chemistries for TiO 2 thin films:
Department of Materials Science and Engineering, University of Florida, P.O. Box 116400 Rhines Hall, Gainesville, FL 32611, USA ( host institution )
;
Norasetthekul, S. ( author )
;
Park, P.Y. ( author )
...
Applied Surface Science. , 2001
Link:
https://doi.org/10.1016/..
?
3
Effect of PECVD of SiO 2 passivation layers on GaN and InGa:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution )
;
Baik, K.H. ( author )
;
Park, P.Y. ( author )
...
Solid State Electronics. , 2001
Link:
https://doi.org/10.1016/..
?
4
Comparison of plasma etch chemistries for MgO:
Department of Materials Science and Engineering, University of Florida, P.O. Box 116400 Rhines Hall, Gainesville, FL 32611, USA ( host institution )
;
Baik, K.H. ( author )
;
Park, P.Y. ( author )
...
Applied Surface Science. , 2001
Link:
https://doi.org/10.1016/..
?
5
Wet and dry etching of Sc 2O 3:
Department of Materials Science and Engineering, University of Florida Rhines Hall, P.O. Box 116400, Gainesville, FL 32611, USA ( host institution )
;
Park, P.Y. ( author )
;
Norasetthekul, S. ( author )
...
Applied Surface Science. , 2001
Link:
https://doi.org/10.1016/..
?
6
Properties of anatase Co x Ti 1− x O 2 thin films epitaxial..:
University of Florida, Dept. of Materials Science and Engineering Rhines Hall, P.O. Box 116400, Gainesville, FL 32611, USA ( host institution )
;
Jeong, B.-S. ( author )
;
Heo, Y.W. ( author )
...
Thin Solid Films. , 2005
Link:
https://doi.org/10.1016/..
?
7
Enhanced functionality in GaN and SiC devices by using nove..:
Department of Materials Science and Engineering, University of Florida, P.O. Box 116400 Rhines Hall, Gainesville, FL 32611 6400, USA ( host institution )
;
Pearton, S.J. ( author )
;
Abernathy, C.R. ( author )
...
Solid State Electronics. , 2004
Link:
https://doi.org/10.1016/..
?
8
Ferromagnetism in GaN and SiC doped with transition metals:
Department of Materials Science and Engineering, University of Florida, Rhines Hall, P.O. Box 116400, Gainesville, FL 32611, USA ( host institution )
;
Pearton, S.J. ( author )
;
Park, Y.D. ( author )
...
Thin Solid Films. , 2004
Link:
https://doi.org/10.1016/..
?
9
Magnetic properties of Co- and Mn-implanted BaTiO 3, SrTiO ..:
School of Physics, Seoul National University, Seoul 151-747, South Korea ( host institution )
;
Lee, J.S. ( author )
;
Khim, Z.G. ( author )
...
Solid State Electronics. , 2003
Link:
https://doi.org/10.1016/..
?
10
Ferromagnetism in Co- and Mn-doped ZnO:
Department of Physics, University of Florida, Gainesville, FL 32611, USA ( host institution )
;
Theodoropoulou, N.A. ( author )
;
Hebard, A.F. ( author )
...
Solid State Electronics. , 2003
Link:
https://doi.org/10.1016/..
?
11
Thermal simulations of high power, bulk GaN rectifiers:
Department of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville, FL 32611, USA ( host institution )
;
Mehandru, R. ( author )
;
Kim, S. ( author )
...
Solid State Electronics. , 2003
Link:
https://doi.org/10.1016/..
?
12
Effects of defects and doping on wide band gap ferromagneti..:
Department of Materials Science and Engineering, University of Florida, P.O. Box 116400, Gainesville, FL 32611 USA ( host institution )
;
Pearton, S.J ( author )
;
Abernathy, C.R ( author )
...
Physica B: Physics of Condensed Matter. , 2003
Link:
https://doi.org/10.1016/..
?
13
Advances in wide bandgap materials for semiconductor spintr..:
Department of Materials Science and Engineering, University of Florida, P.O. Box 116400 Rhines Hall, Gainesville, FL 32611-6400, USA ( host institution )
;
Pearton, S.J. ( author )
;
Abernathy, C.R. ( author )
...
Materials Science & Engineering R. , 2003
Link:
https://doi.org/10.1016/..
?
14
1.6 A GaN Schottky rectifiers on bulk GaN substrates:
Department of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville, FL 32611, USA ( host institution )
;
Johnson, J.W. ( author )
;
Lou, B. ( author )
...
Solid State Electronics. , 2002
Link:
https://doi.org/10.1016/..
?
15
High current bulk GaN Schottky rectifiers:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution )
;
Ip, K ( author )
;
Baik, K.H ( author )
...
Solid State Electronics. , 2002
Link:
https://doi.org/10.1016/..
1-15
