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2024 IEEE International Reliability Physics Symposium (IRPS) ,
1
DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-..:
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2023 International Electron Devices Meeting (IEDM) ,
2
High Performance mm Wave AlN/GaN MISHEMTs on 200 mm Si Subs..:
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2023 International Electron Devices Meeting (IEDM) ,
3
Charge Movement in Back Barrier Induced Time-Dependent On-S..:
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2022 International Electron Devices Meeting (IEDM) ,
4
III-V/III-N technologies for next generation high-capacity ..:
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2022 International Electron Devices Meeting (IEDM) ,
5
Comprehensive Investigations of HBM ESD Robustness for GaN-..:
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2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ,
6
III-V on a Si platform for the next generations of communic..:
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ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) ,
7
III-V HBTs on 300 mm Si substrates using merged nano-ridges..:
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2022 International Electron Devices Meeting (IEDM) ,
8
Back Barrier Trapping Induced Resistance Dispersion in GaN ..:
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2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ,
9
Environmental Impact of CMOS Logic Technologies:
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2022 International Electron Devices Meeting (IEDM) ,
10
Thermal Modelling of GaN & InP RF Devices with Intrinsic Ac..:
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2021 Symposium on VLSI Circuits ,
11
Solid state qubits: how learning from CMOS fabrication can ..:
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2021 IEEE International Reliability Physics Symposium (IRPS) ,
12
On the impact of buffer and GaN-channel thickness on curren..:
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2021 IEEE International Reliability Physics Symposium (IRPS) ,
13
A BSIM-Based Predictive Hot-Carrier Aging Compact Model:
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2021 IEEE International Electron Devices Meeting (IEDM) ,
14
ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs:
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2021 IEEE International Electron Devices Meeting (IEDM) ,
15