E-LIB Suche - Ergebnisse für: Pashkeev, D. A.

1

Interface Design Development for Growing Short-Period InAs/..:

Krivobok, V. S. ; Pashkeev, D. A. ; Klekovkin, A. V....
Bulletin of the Lebedev Physics Institute. 50 (2023) 9 - p. 396-402 , 2023

Link: https://doi.org/10.3103/..

2

Numerical Analysis of X-Ray Diffraction Reflection Spectra ..:

Ilinov, D. V. ; Shabrin, A. D. ; Goncharov, A. E..
Journal of Communications Technology and Electronics. 66 (2021) 3 - p. 348-353 , 2021

Link: https://doi.org/10.1134/..

3

A Hybrid Mid-IR Photodetector Based on Semiconductor Quantu..:

Krivobok, V. S. ; Kondorskiy, A. D. ; Pashkeev, D. A....
Technical Physics Letters. 47 (2021) 5 - p. 388-391 , 2021

Link: https://doi.org/10.1134/..

4

Study of Single-Electron Spectrum of GaAs/AlGaAs Heterostru..:

Litvinov, D. A. ; Pashkeev, D. A. ; Grigoreva, L. N...
Bulletin of the Lebedev Physics Institute. 47 (2020) 4 - p. 105-109 , 2020

Link: https://doi.org/10.3103/..

5

The Influence of Interfacial Effects on the Electron Spectr..:

Krivobok, V. S. ; Pashkeev, D. A. ; Litvinov, D. A...
Technical Physics Letters. 46 (2020) 3 - p. 256-259 , 2020

Link: https://doi.org/10.1134/..

6

Limitations of Control of Electrophysical Characteristics o..:

Goncharov, V. E. ; Nikonov, A. V. ; Batmanovskaya, N. S...
Journal of Communications Technology and Electronics. 65 (2020) 3 - p. 311-315 , 2020

Link: https://doi.org/10.1134/..

7

Excitonic Effects and Impurity–Defect Emission in GaAs/AlGa..:

Krivobok, V. S. ; Litvinov, D. A. ; Nikolaev, S. N....
Semiconductors. 53 (2019) 12 - p. 1608-1616 , 2019

Link: https://doi.org/10.1134/..

8

Analysis of the Photoluminescence Spectra of Heterostructur..:

Yuskaev, M. R. ; Pashkeev, D. A. ; Goncharov, V. E...
Journal of Communications Technology and Electronics. 64 (2019) 3 - p. 325-329 , 2019

Link: https://doi.org/10.1134/..

9

Analysis of Misorientation of Single-Crystal Blocks in the ..:

Shabrin, A. D. ; Goncharov, A. E. ; Pashkeev, D. A...
Journal of Communications Technology and Electronics. 63 (2018) 3 - p. 309-313 , 2018

Link: https://doi.org/10.1134/..

10

Pb1–x Eu x Te alloys (0 ⩽ x ⩽ 1) as materials for vertical-..:

Pashkeev, D. A. ; Selivanov, Yu. G. ; Chizhevskii, E. G..
Semiconductors. 50 (2016) 2 - p. 228-234 , 2016

Link: https://doi.org/10.1134/..

11

Broadening and splitting of emission spectra of a GaInAs/Al..:

Zasavitskii, I I ; Pashkeev, D A ; Bushuev, E V.
Quantum Electronics. 43 (2013) 2 - p. 144-146 , 2013

Link: https://doi.org/10.1070/..

12

Role of intervalley scattering in the radiative recombinati..:

Pashkeev, D. A. ; Zasavitskiy, I. I.
Semiconductors. 47 (2013) 6 - p. 755-760 , 2013

Link: https://doi.org/10.1134/..

13

Dispersion of the refractive index of epitaxial Pb1 − x Eu ..:

Pashkeev, D. A. ; Selivanov, Yu. G. ; Chizhevskii, E. G...
Semiconductors. 45 (2011) 8 - p. 980-987 , 2011

Link: https://doi.org/10.1134/..

14

Dependence of photoluminescence spectra of epitaxial Pb1 − ..:

Pashkeev, D. A. ; Selivanov, Yu. G. ; Felder, F..
Semiconductors. 44 (2010) 7 - p. 861-866 , 2010

Link: https://doi.org/10.1134/..

15

An 8-μm quantum cascade laserproduced by the metalorganic v..:

Zasavitskii, I I ; Pashkeev, D A ; Marmalyuk, Aleksandr A..
Quantum Electronics. 40 (2010) 2 - p. 95-97 , 2010

Link: https://doi.org/10.1070/..