E-LIB Suche - Ergebnisse für: Passemard, G

1

Cu grain growth in interconnects trenches – Experimental ch..:

Carreau, V. ; Maitrejean, S. ; Brechet, Y....
Microelectronic Engineering. 85 (2008) 10 - p. 2133-2136 , 2008

Link: https://doi.org/10.1016/..

2

Copper cleaning in supercritical CO2 for the microprocessor..:

Ventosa, C. ; Rébiscoul, D. ; Perrut, V....
Microelectronic Engineering. 85 (2008) 7 - p. 1629-1638 , 2008

Link: https://doi.org/10.1016/..

3

Physical investigation of the impact of electrolessly depos..:

Olivier, S. ; Decorps, T. ; Bernard, M...
Microelectronic Engineering. 85 (2008) 10 - p. 2051-2054 , 2008

Link: https://doi.org/10.1016/..

4

Thermal furnace and Ultraviolet assisted curing impact on S..:

Zenasni, A. ; Remiat, B. ; Waldfried, C....
Thin Solid Films. 516 (2008) 6 - p. 1097-1103 , 2008

Link: https://doi.org/10.1016/..

5

Evolution of Cu microstructure and resistivity during therm..:

Carreau, V. ; Maîtrejean, S. ; Verdier, M....
Microelectronic Engineering. 84 (2007) 11 - p. 2723-2728 , 2007

Link: https://doi.org/10.1016/..

6

Fatigue of damascene copper lines under cyclic electrical l..:

Moreau, S. ; Maitrejean, S. ; Passemard, G.
Microelectronic Engineering. 84 (2007) 11 - p. 2658-2662 , 2007

Link: https://doi.org/10.1016/..

7

Robust integration of an ULK SiOCH dielectric (k=2.3) for h..:

, In: 2007 IEEE International Interconnect Technology Conferencee,

Aimadeddine, M. ; Maury, P. ; Delaye, V.... - p. None , 2007

Link: https://doi.org/10.1109/..

8

Study of the plasma and cleaning impact on a CoWPB material:

Rébiscoul, D. ; Desre, H. ; Dumas, L....
Microelectronic Engineering. 84 (2007) 11 - p. 2455-2459 , 2007

Link: https://doi.org/10.1016/..

9

Seed layer enhancement by electrochemical deposition: The c..:

Roule, A. ; Amuntencei, M. ; Deronzier, E....
Microelectronic Engineering. 84 (2007) 11 - p. 2610-2614 , 2007

Link: https://doi.org/10.1016/..

10

K value improvement of ULK dielectrics by wet activation:

Cornec, Ch. Le ; Ciaramella, F. ; Jousseaume, V....
Microelectronic Engineering. 83 (2006) 11-12 - p. 2122-2125 , 2006

Link: https://doi.org/10.1016/..

11

Crosslinking impact of mesoporous MSQ films used in microel..:

Ciaramella, F. ; Jousseaume, V. ; Maitrejean, S....
Thin Solid Films. 495 (2006) 1-2 - p. 124-129 , 2006

Link: https://doi.org/10.1016/..

12

Plasma-enhanced-chemical-vapor-deposited ultralow k for a p..:

Jousseaume, V. ; Favennec, L. ; Zenasni, A..
Applied Physics Letters. 88 (2006) 18 - p. , 2006

Link: https://doi.org/10.1063/..

13

Study of the post-etch cleaning compatibility with dense an..:

Rébiscoul, D. ; Puyrenier, B. ; Broussous, L...
Microelectronic Engineering. 83 (2006) 11-12 - p. 2319-2323 , 2006

Link: https://doi.org/10.1016/..

14

Electroless deposition of CoWP: Material characterization a..:

Decorps, T. ; Haumesser, P.H. ; Olivier, S....
Microelectronic Engineering. 83 (2006) 11-12 - p. 2082-2087 , 2006

Link: https://doi.org/10.1016/..

15

Experimental measurements of electron scattering parameters..:

Maîtrejean, S. ; Gers, R. ; Mourier, T...
Microelectronic Engineering. 83 (2006) 11-12 - p. 2396-2401 , 2006

Link: https://doi.org/10.1016/..