E-LIB Suche - Ergebnisse für: Pavlidis, Spyridon

1

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Impla..:

Stein, Shane R. ; Khachariya, Dolar ; Mecouch, Will...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1494-1501 , 2024

Link: https://doi.org/10.1109/..

2

Development of a glycated albumin sensor employing dual apt..:

Hatada, Mika ; Pavlidis, Spyridon ; Sode, Koji
Biosensors and Bioelectronics. 251 (2024) - p. 116118 , 2024

Link: https://doi.org/10.1016/..

3

Development of Direct Electron Transfer-Type Extended Gate ..:

Probst, David ; Twiddy, Jack ; Hatada, Mika...
Analytical Chemistry. , 2024

Link: https://doi.org/10.1021/..

4

Enhancement-Mode AlInN/GaN High-Electron-Mobility Transisto..:

Palmese, Elia ; Xue, Haotian ; Pavlidis, Spyridon.
IEEE Transactions on Electron Devices. 71 (2024) 2 - p. 1003-1009 , 2024

Link: https://doi.org/10.1109/..

5

Towards monitoring of critical illness via the detection of..:

Richardson, Hayley ; Barahona, Jeffrey ; Medwig, Greg...
Biosensors and Bioelectronics: X. 19 (2024) - p. 100501 , 2024

Link: https://doi.org/10.1016/..

6

SiC and GaN Power Devices:

, In: More-than-Moore Devices and Integration for Semiconductors,

Zekentes, Konstantinos ; Veliadis, Victor ; Ryu, Sei-Hyung... - p. 47-104 , 2023

Link: https://doi.org/10.1007/..

7

Chemical Vapor Deposition of Monolayer MoS2 on Chemomechani..:

Sengupta, Rohan ; Vaidya, Shipra ; Szymanski, Dennis...
ACS Applied Nano Materials. 6 (2023) 7 - p. 5081-5086 , 2023

Link: https://doi.org/10.1021/..

8

Schottky contacts on ultra-high-pressure-annealed GaN with ..:

Stein, Shane R. ; Khachariya, Dolar ; Mita, Seiji...
Applied Physics Express. 16 (2023) 3 - p. 031006 , 2023

Link: https://doi.org/10.35848..

9

UVC optoelectronics based on AlGaN on AlN single crystal su..:

, In: 2022 Compound Semiconductor Week (CSW),

Reddy, Pramod ; Loveless, James ; Quinones-Garcia, Cristyan... - p. 1-2 , 2022

Link: https://doi.org/10.1109/..

10

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0..:

Khachariya, Dolar ; Mita, Seiji ; Reddy, Pramod...
Applied Physics Letters. 120 (2022) 17 - p. , 2022

Link: https://doi.org/10.1063/..

11

Low resistivity, p-type, N-Polar GaN achieved by chemical p..:

Rathkanthiwar, Shashwat ; Szymanski, Dennis ; Khachariya, Dolar...
Applied Physics Express. 15 (2022) 8 - p. 081004 , 2022

Link: https://doi.org/10.35848..

12

Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanc..:

Reddy, Pramod ; Mecouch, Will ; Hayden Breckenridge, M....
physica status solidi (RRL) – Rapid Research Letters. 16 (2022) 6 - p. , 2022

Link: https://doi.org/10.1002/..

13

Point-defect management in homoepitaxially grown Si-doped G..:

Rathkanthiwar, Shashwat ; Bagheri, Pegah ; Khachariya, Dolar...
Applied Physics Express. 15 (2022) 5 - p. 051003 , 2022

Link: https://doi.org/10.35848..

14

Phase transition of Al2O3-encapsulated MoTe2 via rapid ther..:

Sengupta, Rohan ; Dangi, Saroj ; Krylyuk, Sergiy..
Applied Physics Letters. 121 (2022) 3 - p. , 2022

Link: https://doi.org/10.1063/..

15

Design and performance analysis of GaN vertical JFETs with ..:

Stein, Shane R ; Khachariya, Dolar ; Pavlidis, Spyridon
Semiconductor Science and Technology. 37 (2022) 12 - p. 125011 , 2022

Link: https://doi.org/10.1088/..