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Paz, B. Cardoso
1427  Ergebnisse:
Personensuche X
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1

Tunnel and capacitive coupling optimization in FDSOI spin-q..:

, In: 2023 International Electron Devices Meeting (IEDM),
Bertrand, B. ; Martinez, B. ; Li, J.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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2

Transport characterization of CMOS-based devices fabricated..:

, In: ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC),
Elbaz, G. ; Casse, M. ; Labracherie, V.... - p. 5-8 , 2023
Link: https://doi.org/10.1109/..
 
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3

Methodology for an efficient characterization flow of indus..:

, In: 2022 International Electron Devices Meeting (IEDM),
Contamin, L.C. ; Paz, B. Cardoso ; Diaz, B. Martinez... - p. 22.1.1-22.1.4 , 2022
Link: https://doi.org/10.1109/..
 
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4

FDSOI for cryoCMOS electronics: device characterization tow..:

, In: 2022 International Electron Devices Meeting (IEDM),
Casse, M. ; Paz, B. Cardoso ; Bergamaschi, F.... - p. 34.6.1-34.6.4 , 2022
Link: https://doi.org/10.1109/..
 
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5

Coupling control in the few-electron regime of quantum dot ..:

, In: ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC),
Paz, B. Cardoso ; El-Homsy, V. ; Niegemann, D. J.... - p. 45-48 , 2022
Link: https://doi.org/10.1109/..
 
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6

Specificities of linear Si QD arrays integration and charac..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Niebojewski, H. ; Bertrand, B. ; Nowak, E.... - p. 415-416 , 2022
Link: https://doi.org/10.1109/..
 
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7

A new FDSOI spin qubit platform with 40nm effective control..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Bedecarrats, T. ; Paz, B. Cardoso ; Diaz, B. Martinez... - p. 1-4 , 2021
Link: https://doi.org/10.1109/..
 
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8

Material and integration challenges for large scale Si quan..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Vinet, M. ; Bedecarrats, T. ; Paz, B. Cardoso... - p. 14.2.1-14.2.4 , 2021
Link: https://doi.org/10.1109/..
 
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9

Lambert-W function-based parameter extraction for FDSOI MOS..:

Serra di Santa Maria, F. ; Contamin, L. ; Cardoso Paz, B....
Solid-State Electronics.  186 (2021)  - p. 108175 , 2021
Link: https://doi.org/10.1016/..
 
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10

Variability Evaluation of 28nm FD-SOI Technology at Cryogen..:

, In: 2020 IEEE Symposium on VLSI Technology,
Paz, B. Cardoso ; Guevel, L. Le ; Casse, M.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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11

A new FDSOI spin qubit platform with 40nm effective control..:

Bédécarrats, T ; Paz, B. Cardoso ; Diaz, B. Martinez...
http://arxiv.org/abs/2304.03721.  , 2023
Link: http://arxiv.org/abs/230..
 
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12

Material and integration challenges for large scale Si quan..:

Vinet, M ; Bedecarrats, T ; Paz, B. Cardoso...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IEDM19574.2021.9720708.  , 2021
Link: https://cea.hal.science/..
 
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13

Lambert-W Function-based Parameter Extraction for FDSOI MOS..:

Serra di Santa Maria, F ; Contamin, L ; Cardoso Paz, B...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2021.108175.  , 2021
Link: https://hal.archives-ouv..
 
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14

Lambert-W Function-based Parameter Extraction for FDSOI MOS..:

Serra Di Santa Maria, F ; Contamin, L ; Cardoso Paz, B...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2021.108175.  , 2021
Link: https://hal.science/hal-..
 
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15

Material and integration challenges for large scale Si quan..:

Vinet, M ; Bedecarrats, T ; Paz, B. Cardoso...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IEDM19574.2021.9720708.  , 2021
Link: https://cea.hal.science/..
 
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