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Pesic, Milan
249  Ergebnisse:
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1

Characterization and Multiscale Modeling of TDDB in State-o..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Palmieri, Andrea ; Tavakoli, Mahdi ; Ching, Chi... - p. 10A.3-1-10A.3-6 , 2024
Link: https://doi.org/10.1109/..
 
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2

Low-PBTS defect-engineered high-mobility metal-oxide BEOL t..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Bcltrando, Bastien ; Coppolelli, Bruno ; Kim, Jung-Bae... - p. 4A.2-1-4A.2-6 , 2024
Link: https://doi.org/10.1109/..
 
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3

Blocking Oxide Material Engineering to Improve Retention Lo..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Rollo, Tommaso ; Lo, Hansel ; Larcher, Luca.. - p. 1-5 , 2024
Link: https://doi.org/10.1109/..
 
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4

Impact of Device Geometry, Physical Doping and Electrostati..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Palmieri, Andrea ; Cherkaoui, Karim ; Aabrar, Khandker Akif... - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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5

Insights into device and material origins and physical mech..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Pesic, Milan ; Beltrando, Bastien ; Rollo, Tommaso... - p. 1-8 , 2023
Link: https://doi.org/10.1109/..
 
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6

On the Dopant, Defect States, and Mobility in W Doped Amorp..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Hu, Yaoqiao ; Aabrar, Khandker Akif ; Palmieri, Andrea... - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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7

Polarization Switching and Charge Trapping in HfO2-Based Fe..:

Zhou, Haidi ; Ocker, Johannes ; Müller, Stefan..
IEEE Electron Device Letters.  44 (2023)  11 - p. 1903-1906 , 2023
Link: https://doi.org/10.1109/..
 
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8

The Role of Defects and Interface Degradation on Ferroelect..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Benatti, Lorenzo ; Vecchi, Sara ; Pesic, Milan. - p. 1-6 , 2023
Link: https://doi.org/10.1109/..
 
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9

Electron-assisted switching in FeFETs: Memory window dynami..:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),
Pesic, Milan ; Beltrando, Bastien ; Padovani, Andrea... - p. 4A.1-1-4A.1-8 , 2022
Link: https://doi.org/10.1109/..
 
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10

Reliability of Non-Volatile Memory Devices for Neuromorphic..:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),
Padovani, Andrea ; Pesic, Milan ; Nardi, Federico... - p. 1-10 , 2022
Link: https://doi.org/10.1109/..
 
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11

Variability sources and reliability of 3D — FeFETs:

, In: 2021 IEEE International Reliability Physics Symposium (IRPS),
Pesic, Milan ; Beltrando, Bastien ; Padovani, Andrea... - p. 1-7 , 2021
Link: https://doi.org/10.1109/..
 
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12

Embedding ferroelectric HfOx in memory hierarchy: Material-..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Pesic, Milan ; Beltrando, Bastien - p. 33.4.1-33.4.4 , 2021
Link: https://doi.org/10.1109/..
 
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13

Hot Electrons as the Dominant Source of Degradation for Sub..:

, In: 2020 IEEE Symposium on VLSI Technology,
Tan, Ava J. ; Pesic, Milan ; Larcher, Luca... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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14

Modeling of Field Cycling Behavior of Ferroelectric Hafnia-..:

, In: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices,
Pešić, Milan ; Larcher, Luca - p. 399-411 , 2019
Link: https://doi.org/10.1016/..
 
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15

Antiferroelectric One Transistor/One Capacitor Memory Cell:

, In: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices,
Pešić, Milan ; Schroeder, Uwe - p. 425-435 , 2019
Link: https://doi.org/10.1016/..
 
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