Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
Piao, Guanxi
17  Ergebnisse:
Personensuche X
?
1

High-speed growth of thick high-purity β-Ga2O3 layers by lo..:

Yoshinaga, Junya ; Tozato, Haruka ; Okuyama, Takahito...
Applied Physics Express.  16 (2023)  9 - p. 095504 , 2023
Link: https://doi.org/10.35848..
 
?
2

Ion-implanted triple-zone graded junction termination exten..:

Duan, Yu ; Wang, Jingshan ; Zhu, Zhongtao...
Applied Physics Letters.  122 (2023)  21 - p. , 2023
Link: https://doi.org/10.1063/..
 
?
3

Effects of GaN cap layer thickness on photoexcited carrier ..:

Murotani, Hideaki ; Nakatsuru, Keigo ; Kurai, Satoshi...
Japanese Journal of Applied Physics.  62 (2023)  3 - p. 031001 , 2023
Link: https://doi.org/10.35848..
 
?
4

Integrable Quasivertical GaN U‐Shaped Trench‐Gate Metal‐Oxi..:

Guo, Zhibo ; Hitchcock, Collin ; Karlicek Jr., Robert F....
physica status solidi (a).  217 (2020)  7 - p. , 2020
Link: https://doi.org/10.1002/..
 
?
5

Integrable Quasivertical GaN U‐Shaped Trench‐Gate Metal‐Oxi..:

Guo, Zhibo ; Hitchcock, Collin ; Karlicek Jr., Robert F....
physica status solidi (a).  217 (2019)  7 - p. , 2019
Link: https://doi.org/10.1002/..
 
?
6

Discrete-Pulsed Current Time Method to Estimate Channel The..:

Xu, Zheng ; Mandal, Saptarshi ; Gao, Jianyi...
IEEE Transactions on Electron Devices.  65 (2018)  12 - p. 5301-5306 , 2018
Link: https://doi.org/10.1109/..
 
?
7

List of contributors:

, In: Nitride Semiconductor Light-Emitting Diodes (LEDs),
Ajay, Akhil ; Arefin, Nazmul ; Bertazzi, Francesco... - p. xi-xiii , 2018
Link: https://doi.org/10.1016/..
 
?
8

MOCVD growth of nitride semiconductors:

, In: Nitride Semiconductor Light-Emitting Diodes (LEDs),
Matsumoto, Koh ; Yano, Yoshiki ; Tokunaga, Hiroki... - p. 25-41 , 2018
Link: https://doi.org/10.1016/..
 
?
9

Study of carbon concentration in GaN grown by metalorganic ..:

Piao, Guanxi ; Ikenaga, Kazutada ; Yano, Yoshiki...
Journal of Crystal Growth.  456 (2016)  - p. 137-139 , 2016
Link: https://doi.org/10.1016/..
 
?
10

Opportunities and challenges in GaN metal organic chemical ..:

Matsumoto, Koh ; Yamaoka, Yuya ; Ubukata, Akinori...
Japanese Journal of Applied Physics.  55 (2016)  5S - p. 05FK04 , 2016
Link: https://doi.org/10.7567/..
 
?
11

Gate-Length Dependence of DC Characteristics in Submicron-G..:

Ide, Toshihide ; Shimizu, Mitsuaki ; Nakajima, Akira...
Japanese Journal of Applied Physics.  46 (2007)  4S - p. 2334 , 2007
Link: https://doi.org/10.1143/..
 
?
12

GaN Crystal Growth on Sapphire Substrate Using Islandlike G..:

Shimizu, Mitsuaki ; Hirata, Yoshitaka ; Piao, Guanxi.
Japanese Journal of Applied Physics.  43 (2004)  12A - p. L1537-L1539 , 2004
Link: https://doi.org/10.1143/..
 
?
13

Growth of Eu-doped GaN by gas source molecular beam epitaxy..:

Li, Zhiqiang ; Bang, Hyungjin ; Piao, Guanxi..
Journal of Crystal Growth.  240 (2002)  3-4 - p. 382-388 , 2002
Link: https://doi.org/10.1016/..
 
?
14

Substrate roughness dependence of structural and optical pr..:

Li, Zhiqiang ; Bang, Hyungjin ; Piao, Guanxi...
Journal of Crystal Growth.  234 (2002)  1 - p. 25-31 , 2002
Link: https://doi.org/10.1016/..
 
?
15

Three-Zone Junction Termination Extensions for Improved Per..:

, In: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
Duan, Yu ; Guanxi, Piao ; Ikenaga, Kazutada... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
1-15