Plesiewicz, J.
68  Ergebnisse:
Personensuche X
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4

AlGaN/GaN HEMT structures on ammono bulk GaN substrate:

Kruszewski, P ; Prystawko, P ; Kasalynas, I...
Semiconductor Science and Technology.  29 (2014)  7 - p. 075004 , 2014
 
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6

Band structure and effective mass of InN under pressure:

Gorczyca, I. ; Dmowski, L. ; Plesiewicz, J....
physica status solidi (b).  245 (2008)  5 - p. 887-889 , 2008
 
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8

Towards identification of localized donor states in InN:

Plesiewicz, J ; Suski, T ; Dmowski, L...
Semiconductor Science and Technology.  22 (2007)  10 - p. 1161-1164 , 2007
 
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9

Role of localized donor states in transport and photolumine..:

Suski, T. ; Kamińska, A. ; Franssen, G....
physica status solidi (b).  244 (2007)  6 - p. 1825-1828 , 2007
 
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10

High pressure studies of radiative recombination mechanisms..:

Suski, T. ; Franssen, G. ; Teisseyre, H....
physica status solidi (b).  244 (2007)  1 - p. 38-41 , 2007
 
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13

Localized donor state above the conduction band minimum in ..:

Dmowski, L. H. ; Dybko, K. ; Plesiewicz, J....
physica status solidi (b).  243 (2006)  7 - p. 1537-1540 , 2006
 
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14

Resonant localized donor state above the conduction band mi..:

, In: Applied physics letters / publ. by the American Institute of Physics
Dmowski, L. H. ; Plesiewicz, J. A. ; Suski, T..... (2005)  26 - p. 262105
Exemplare: Zentrale;
 
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