E-LIB Suche - Ergebnisse für: Pobegen, Gregor

1

Gate Switching Instability in Silicon Carbide MOSFETs—Part ..:

Grasser, Tibor ; Feil, Maximilian W. ; Waschneck, Katja...
IEEE Transactions on Electron Devices. 71 (2024) 7 - p. 4218-4226 , 2024

Link: https://doi.org/10.1109/..

2

Evidence‐Based Understanding of Lateral Hole Transport Duri..:

Butej, Boris ; Wieland, Dominik ; Pogany, Dionyz...
physica status solidi (a). , 2024

Link: https://doi.org/10.1002/..

3

Gate Switching Instability in Silicon Carbide MOSFETs—Part ..:

Feil, Maximilian W. ; Waschneck, Katja ; Reisinger, Hans...
IEEE Transactions on Electron Devices. 71 (2024) 7 - p. 4210-4217 , 2024

Link: https://doi.org/10.1109/..

4

Engineering materials: research and application optimizatio:

Quah, Hock Jin ; Marek, Juraj ; Pobegen, Gregor... , 2023

Link: https://search.ebscohost..

5

Quantification of Secondary Electron Doping Contrast in the..:

Moser, Maximilian ; Pobegen, Gregor ; Smoliner, Jürgen
Materials Science Forum. 1089 (2023) - p. 23-29 , 2023

Link: https://doi.org/10.4028/..

6

Semiconductor Wafer Fabrication, Coatings and Tribology:

Marek, Juraj ; Pobegen, Gregor ; Grossner, Ulrike.. , 2023

Link: https://search.ebscohost..

7

International Conference on Silicon Carbide and Related Mat..

Scientific Books Collection, Vol. 56

Marek, Juraj ; Pobegen, Gregor ; Grossner, Ulrike , 2023

Link: https://search.ebscohost..

8

Functional and Eco-Friendly Materials:

Marek, Juraj ; Pobegen, Gregor ; Grossner, Ulrike... , 2023

Link: https://search.ebscohost..

9

Technologies and Application of Engineering Materials: Spec..

Materials Science Forum, Vol. 1091

Marek, Juraj ; Pobegen, Gregor ; Grossner, Ulrike. , 2023

Link: https://search.ebscohost..

10

P-Type Impurities in 4H-SiC Calculated Using Density Functi..:

Smith, Niamh ; Weger, Magdalena ; Pobegen, Gregor.
Defect and Diffusion Forum. 426 (2023) - p. 35-42 , 2023

Link: https://doi.org/10.4028/..

11

Electroluminescence Spectra of a Gate Switched MOSFET at Cr..:

Weger, Magdalena ; Biermeier, Dominik ; Feil, Maximilian Wolfgang...
Materials Science Forum. 1091 (2023) - p. 15-23 , 2023

Link: https://doi.org/10.4028/..

12

Quantitative analysis of trace elements in technological ma..:

Podsednik, Maximilian ; Weiss, Maximilian ; Larisegger, Silvia...
Spectrochimica Acta Part B: Atomic Spectroscopy. 205 (2023) - p. 106705 , 2023

Link: https://doi.org/10.1016/..

13

Hot-carrier-degradation measured with charge-pumping in tre..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),

Susnik, Sabina ; Pobegen, Gregor ; Grasser, Tibor - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

14

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFE..:

Vasilev, Aleksandr ; Feil, Maximilian Wolfgang ; Schleich, Christian...
Materials Science Forum. 1090 (2023) - p. 119-126 , 2023

Link: https://doi.org/10.4028/..

15

Recent Developments in Understanding the Gate Switching Ins..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),

Feil, Maximilian W. ; Waschneck, Katja ; Reisinger, Hans... - p. 1-9 , 2023

Link: https://doi.org/10.1109/..