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Pouget, V.
261  Ergebnisse:
Personensuche X
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1

Analysis of the Single-Event Latch-up Cross Section of a 16..:

Fongral, M. ; Pouget, V. ; Saigne, F....
IEEE Transactions on Nuclear Science.  , 2024
Link: https://doi.org/10.1109/..
 
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2

Impact of Aging Degradation on Heavy-Ion SEU Response of 28..:

Mounir Mahmoud, M. ; Prinzie, J. ; Soderstrom, D....
IEEE Transactions on Nuclear Science.  69 (2022)  8 - p. 1865-1875 , 2022
Link: https://doi.org/10.1109/..
 
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3

Bridging RHA Methodology From Component to System Level App..:

Da Costa Lopes, I. ; Pouget, V. ; Wrobel, F....
IEEE Transactions on Nuclear Science.  69 (2022)  7 - p. 1747-1756 , 2022
Link: https://doi.org/10.1109/..
 
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4

Laser-induced Transients in a GaN-on-Si Power HEMT using Si..:

, In: 2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS),
Ngom, C. ; Pouget, V. ; Zerarka, M.... - p. 1-6 , 2021
Link: https://doi.org/10.1109/..
 
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5

Single-Event Latchup sensitivity: Temperature effects and t..:

Guagliardo, S. ; Wrobel, F. ; Aguiar, Y.Q....
Microelectronics Reliability.  119 (2021)  - p. 114087 , 2021
Link: https://doi.org/10.1016/..
 
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6

Modelling of charge injection by multi-photon absorption in..:

Ngom, C. ; Pouget, V. ; Zerarka, M....
Microelectronics Reliability.  126 (2021)  - p. 114339 , 2021
Link: https://doi.org/10.1016/..
 
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7

Design exploration of majority voter architectures based on..:

Aguiar, Y.Q. ; Wrobel, F. ; Autran, J.-L....
Microelectronics Reliability.  114 (2020)  - p. 113877 , 2020
Link: https://doi.org/10.1016/..
 
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8

Effect of Temperature on Single Event Latchup Sensitivity:

, In: 2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS),
Guagliardo, S. ; Wrobel, F. ; Aguiar, Y. Q.... - p. 1-5 , 2020
Link: https://doi.org/10.1109/..
 
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9

Reliability-driven pin assignment optimization to improve i..:

Aguiar, Y.Q. ; Wrobel, F. ; Autran, J.-L....
Microelectronics Reliability.  114 (2020)  - p. 113885 , 2020
Link: https://doi.org/10.1016/..
 
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10

Radiation hardening efficiency of gate sizing and transisto..:

Aguiar, Y.Q. ; Wrobel, F. ; Guagliardo, S....
Microelectronics Reliability.  100-101 (2019)  - p. 113457 , 2019
Link: https://doi.org/10.1016/..
 
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11

Single Event Latchup Cross Section Calculation from TCAD Si..:

, In: 2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS),
Guagliardo, S. ; Wrobel, F. ; Aguiar, Y.Q.... - p. 01-05 , 2019
Link: https://doi.org/10.1109/..
 
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12

Environmental health risks perceptions: results from cross-..:

Verger, P ; Urban-Boudjelab, S ; Pouget, V...
European Journal of Public Health.  29 (2019)  Supplement_4 - p. , 2019
Link: https://doi.org/10.1093/..
 
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13

Approximate TMR based on successive approximation and loop ..:

Rodrigues, G.S. ; Fonseca, J.S. ; Kastensmidt, F.L....
Microelectronics Reliability.  100-101 (2019)  - p. 113385 , 2019
Link: https://doi.org/10.1016/..
 
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14

Analysis of the charge sharing effect in the SET sensitivit..:

Aguiar, Y.Q. ; Wrobel, F. ; Autran, J.-L....
Microelectronics Reliability.  88-90 (2018)  - p. 920-924 , 2018
Link: https://doi.org/10.1016/..
 
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15

Total Ionizing Dose effects in DDR3 SDRAMs under Co-60 and ..:

, In: 2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS),
Kohler, P. ; Pouget, V. ; Saigne, F.... - p. 1-7 , 2018
Link: https://doi.org/10.1109/..
 
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