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Putcha, V
100  Ergebnisse:
Personensuche X
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1

Modelling ultra-fast threshold voltage instabilities in Hf-..:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),
O'Sullivan, B. J. ; Truijen, B. ; Putcha, V.... - p. 4A.4-1-4A.4-8 , 2022
Link: https://doi.org/10.1109/..
 
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2

On the impact of buffer and GaN-channel thickness on curren..:

, In: 2021 IEEE International Reliability Physics Symposium (IRPS),
Putcha, V. ; Cheng, L. ; Alian, A.... - p. 1-8 , 2021
Link: https://doi.org/10.1109/..
 
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3

ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Wu, W.-M. ; Chen, S.-H. ; Sibaja-Hernandez, A.... - p. 39.5.1-39.5.4 , 2021
Link: https://doi.org/10.1109/..
 
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4

Exploring the DC reliability metrics for scaled GaN-on-Si d..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Putcha, V. ; Bury, E. ; Franco, J.... - p. 1-8 , 2020
Link: https://doi.org/10.1109/..
 
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5

Defect profiling in FEFET Si:HfO2 layers:

O'Sullivan, B. J. ; Putcha, V. ; Izmailov, R....
Applied Physics Letters.  117 (2020)  20 - p. , 2020
Link: https://doi.org/10.1063/..
 
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6

Parasitic subthreshold drain current and low frequency nois..:

Takakura, K ; Putcha, V ; Simoen, E...
Semiconductor Science and Technology.  36 (2020)  2 - p. 024003 , 2020
Link: https://doi.org/10.1088/..
 
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7

From 5G to 6G: will compound semiconductors make the differ..:

, In: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT),
Collaert, N. ; Alian, A. ; Banerjee, A.... - p. 1-4 , 2020
Link: https://doi.org/10.1109/..
 
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8

CMOS-compatible GaN-based devices on 200mm-Si for RF applic..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Peralagu, U. ; De Jaeger, B. ; Fleetwood, D. M.... - p. 17.2.1-17.2.4 , 2019
Link: https://doi.org/10.1109/..
 
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9

A brief overview of gate oxide defect properties and their ..:

Kaczer, B. ; Franco, J. ; Weckx, P....
Microelectronics Reliability.  81 (2018)  - p. 186-194 , 2018
Link: https://doi.org/10.1016/..
 
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10

The defect-centric perspective of device and circuit reliab..:

Kaczer, B. ; Franco, J. ; Weckx, P....
Solid-State Electronics.  125 (2016)  - p. 52-62 , 2016
Link: https://doi.org/10.1016/..
 
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11

Bias Temperature Instability (BTI) in high-mobility channel..:

Franco, J. ; Kaczer, B. ; Vais, A....
MRS Advances.  1 (2016)  49 - p. 3329-3340 , 2016
Link: https://doi.org/10.1557/..
 
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12

Identification of appropriate outcome indices in head and n..:

Tighe, D. ; Kwok, A. ; Putcha, V..
International Journal of Oral and Maxillofacial Surgery.  43 (2014)  9 - p. 1047-1053 , 2014
Link: https://doi.org/10.1016/..
 
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13

Complications encountered in a prospective series of 182 pa..:

McGurk, M.G. ; Fan, K.F.M. ; MacBean, A.D..
Oral Oncology.  43 (2007)  5 - p. 471-476 , 2007
Link: https://doi.org/10.1016/..
 
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14

O182 Treatment-related complications in oral cancer patient..:

Cascarini, L. ; Monteiro, M. ; Putcha, V..
Oral Oncology Supplement.  2 (2007)  1 - p. 124 , 2007
Link: https://doi.org/10.1016/..
 
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15

Exposure-response relations for work related respiratory sy..:

Brisman, J ; Nieuwenhuijsen, M J ; Venables, K M...
Occupational and Environmental Medicine.  61 (2004)  6 - p. 551-553 , 2004
Link: https://doi.org/10.1136/..
 
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