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Putrya, Mikhail G.
12  Ergebnisse:
Personensuche X
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1

Approbation of Method of Microcircuits Interchangeability E..:

, In: 2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus),
Shabanov, Andrei A. ; Putrya, Mikhail G. - p. 2184-2186 , 2020
Link: https://doi.org/10.1109/..
 
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2

Development of a Technological Route for the Silicon Micron..:

, In: 2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus),
Chaplygin, Yury A. ; Putrya, Mikhail G. ; Paramonov, V. V.. - p. 2119-2122 , 2020
Link: https://doi.org/10.1109/..
 
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3

Analysis of Parameter Dependencies of Non-uniform Sampling ..:

, In: 2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus),
Polunin, Mikhail ; Bykova, Anastasiya ; Losev, Vladimir.. - p. 1721-1724 , 2020
Link: https://doi.org/10.1109/..
 
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4

Development of a Prototype CMOS 0.18 μm Low-Noise Amplifier..:

Kotlyarov, E. Yu. ; Putrya, M. G. ; Mikhailov, V. Yu...
Russian Microelectronics.  52 (2023)  7 - p. 669-676 , 2023
Link: https://doi.org/10.1134/..
 
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5

Evolution of the Modes of a Magnetic Tunnel Junction upon a..:

Shkanakina, M. D. ; Kichin, G. A. ; Skirdkov, P. N...
Bulletin of the Russian Academy of Sciences: Physics.  87 (2023)  1 - p. 92-96 , 2023
Link: https://doi.org/10.3103/..
 
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6

Estimating the reliability of aluminum metallization of int..:

Safonov, S. O. ; Bespalov, V. P. ; Golishnikov, A. A..
Russian Microelectronics.  44 (2015)  7 - p. 453-459 , 2015
Link: https://doi.org/10.1134/..
 
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7

Research and development of deep anisotropic plasma silicon..:

Golishnikov, A. A. ; Kostyukov, D. A. ; Putrya, M. G.
Russian Microelectronics.  41 (2012)  7 - p. 365-369 , 2012
Link: https://doi.org/10.1134/..
 
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8

Nanoscale structure formation by plasma etching:

Golishnikov, A. A. ; Putrya, M. G. ; Rybachek, E. N.
Russian Microelectronics.  40 (2011)  7 - p. 469-472 , 2011
Link: https://doi.org/10.1134/..
 
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9

Silicon nanoprofiling with the use of a solid aluminum oxid..:

Belov, A. N. ; Demidov, Yu. A. ; Putrya, M. G...
Semiconductors.  43 (2009)  13 - p. 1660-1662 , 2009
Link: https://doi.org/10.1134/..
 
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10

Effect of silicon-wafer preoxidation on the low-frequency n..:

Zhigal'skii, G. P. ; Putrya, M. G. ; Fedorov, A. S.
Radiophysics and Quantum Electronics.  32 (1989)  9 - p. 862-868 , 1989
Link: https://doi.org/10.1007/..
 
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11

LNA IC Development for LTE Bands Based on Bulk CMOS 180nm D..:

, In: 2023 Seminar on Microelectronics, Dielectrics and Plasmas (MDP),
Kotlyarov, Evgeny Yu. ; Putrya, Mikhail ; Mikhailov, Viktor.. - p. 75-81 , 2023
Link: https://doi.org/10.1109/..
 
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12

A new hybrid molecular metal assembling a BEDT-TTF conducti..:

Zorina, Leokadiya V. ; Prokhorova, Tat'yana G. ; Khasanov, Salavat S....
CrystEngComm.  11 (2009)  10 - p. 2102 , 2009
Link: https://doi.org/10.1039/..
 
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