Rafhay, Q.
16  Ergebnisse:
Personensuche X
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1

Variability of Trap-induced Mobility Fluctuations in Nanosc..:

, In: 2023 International Electron Devices Meeting (IEDM),
Gauthier, O. ; Haendler, S. ; Rafhay, Q.. - p. 1-4 , 2023
 
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2

Investigation of resistance fluctuations in ReRAM: physical..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Reganaz, L. ; Deleruyelle, D. ; Rafhay, Q.... - p. 1-6 , 2023
 
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3

Platinum redistribution in the Ni0.9Pt0.1/InP system: Impac..:

Boyer, F. ; Dabertrand, K. ; Gergaud, P....
Materials Science in Semiconductor Processing.  128 (2021)  - p. 105731 , 2021
 
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4

Reliability of CMOS-Compatible Ti / n-InP and Ti / p-InGaAs..:

, In: 2019 IEEE 16th International Conference on Group IV Photonics (GFP),
Boyer, F. ; Jany, C. ; Da Fonseca, J.... - p. 1-2 , 2019
 
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12

Characterization and 3D TCAD simulation of NOR-type flash n..:

Zaka, A. ; Singer, J. ; Dornel, E....
Solid-State Electronics.  63 (2011)  1 - p. 158-162 , 2011
 
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13

Technological guidelines for the design of tandem III-V nan..:

Maryasin V ; BUCCI, DANIELE ; Rafhay Q...
info:eu-repo/semantics/altIdentifier/wos/WOS:000411540000038.  , 2017
 
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14

New Y -function based MOSFET parameter extraction method fr..:

Henry, J.B ; Rafhay, Q ; Cros, A.
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2016.06.004.  , 2016
 
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15

Compact modeling of subthreshold swing in double gate and n..:

Hiblot, G ; Rafhay, Q ; Boeuf, F.
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2015.06.008.  , 2015
 
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