E-LIB Suche - Ergebnisse für: Rebohle, L.

1

Charge transport in n-type As- and Sb-hyperdoped Ge:

Wang, Mao ; Shaikh, M. S. ; Li, Yi...
Applied Physics Letters. 124 (2024) 14 - p. , 2024

Link: https://doi.org/10.1063/..

2

Formation and specific contact resistivity of NiGe on polyc..:

Begeza, V. ; Rebohle, L. ; Stöcker, H....
Journal of Alloys and Compounds. 990 (2024) - p. 174420 , 2024

Link: https://doi.org/10.1016/..

3

Deposition of silicon oxide films on silicon using HelixJet..:

Rebohle, L. ; Quade, A. ; Schumann, T....
Thin Solid Films. 753 (2022) - p. 139257 , 2022

Link: https://doi.org/10.1016/..

4

Functionalized silicon substrates with stripe-patterned sur..:

Blaschke, D. ; Pahlow, S. ; Fremberg, T....
Applied Surface Science. 545 (2021) - p. 148729 , 2021

Link: https://doi.org/10.1016/..

5

A correlation study of layer growth rate, thickness uniform..:

Blaschke, D. ; Munnik, F. ; Grenzer, J....
Applied Surface Science. 506 (2020) - p. 144188 , 2020

Link: https://doi.org/10.1016/..

6

Band gap renormalization in n-type GeSn alloys made by ion ..:

Prucnal, S. ; Berencén, Y. ; Wang, M....
Journal of Applied Physics. 125 (2019) 20 - p. , 2019

Link: https://doi.org/10.1063/..

7

Thermal stability of Te-hyperdoped Si: Atomic-scale correla..:

Wang, Mao ; Hübner, R. ; Xu, Chi...
Physical Review Materials. 3 (2019) 4 - p. , 2019

Link: https://doi.org/10.1103/..

8

Breaking the Doping Limit in Silicon by Deep Impurities:

Wang, Mao ; Debernardi, A. ; Berencén, Y....
Physical Review Applied. 11 (2019) 5 - p. , 2019

Link: https://doi.org/10.1103/..

9

Structural and optical properties of pulsed-laser deposited..:

Berencén, Y ; Xie, Y ; Wang, M...
Semiconductor Science and Technology. 34 (2019) 3 - p. 035001 , 2019

Link: https://doi.org/10.1088/..

10

Ex situ n+ doping of GeSn alloys via non-equilibrium proces..:

Prucnal, S ; Berencén, Y ; Wang, M...
Semiconductor Science and Technology. 33 (2018) 6 - p. 065008 , 2018

Link: https://doi.org/10.1088/..

11

Extended Infrared Photoresponse inTe-HyperdopedSiat Room Te..:

Wang, Mao ; Berencén, Y. ; García-Hemme, E....
Physical Review Applied. 10 (2018) 2 - p. , 2018

Link: https://doi.org/10.1103/..

12

Structural and electrical properties of Se-hyperdoped Si vi..:

Liu, Fang ; Prucnal, S. ; Yuan, Ye...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 424 (2018) - p. 52-55 , 2018

Link: https://doi.org/10.1016/..

13

Determination of the thermal cycle during flash lamp anneal..:

Rebohle, L. ; Neubert, M. ; Schumann, T..
International Journal of Heat and Mass Transfer. 126 (2018) - p. 1-8 , 2018

Link: https://doi.org/10.1016/..

14

Realizing the insulator-to-metal transition in Se-hyperdope..:

Liu, Fang ; Prucnal, S ; Berencén, Y...
Journal of Physics D: Applied Physics. 50 (2017) 41 - p. 415102 , 2017

Link: https://doi.org/10.1088/..

15

Engineering of optical and electrical properties of ZnO by ..:

Prucnal, S. ; Wu, Jiada ; Berencén, Y....
Journal of Applied Physics. 122 (2017) 3 - p. , 2017

Link: https://doi.org/10.1063/..