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Reggiani, Susanna
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1

Characterization and TCAD Modeling of the Lateral Space Cha..:

Balestra, Luigi ; Gnani, Elena ; Rossetti, Mattia..
IEEE Transactions on Electron Devices.  71 (2024)  4 - p. 2565-2569 , 2024
Link: https://doi.org/10.1109/..
 
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2

Characterization and TCAD Simulation of the Electrostatic P..:

, In: 2024 IEEE Latin American Electron Devices Conference (LAEDC),
Balestra, Luigi ; Gnani, Elena ; Reggiani, Susanna.. - p. 1-4 , 2024
Link: https://doi.org/10.1109/..
 
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3

Understanding the role of encapsulation layers under wet co..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Reggiani, Susanna ; Balestra, Luigi ; Gnani, Elena.. - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
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4

Anomalous increase of leakage current in epoxy moulding com..:

Balestra, Luigi ; Cirioni, Leonardo ; Cavallini, Andrea...
Solid-State Electronics.  208 (2023)  - p. 108728 , 2023
Link: https://doi.org/10.1016/..
 
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5

Breakdown-Voltage Degradation Under AC Stress of Thick SiO2..:

Giuliano, Federico ; Reggiani, Susanna ; Gnani, Elena...
IEEE Transactions on Electron Devices.  70 (2023)  9 - p. 4953-4957 , 2023
Link: https://doi.org/10.1109/..
 
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6

GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Mo..:

, In: Lecture Notes in Electrical Engineering; Proceedings of SIE 2023,
Ercolano, Franco ; Tallarico, Andrea Natale ; Millesimo, Maurizio... - p. 288-297 , 2023
Link: https://doi.org/10.1007/..
 
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7

TCAD Modeling of High-Field Electron Transport in Bulk Wurt..:

Balestra, Luigi ; Ercolano, Franco ; Gnani, Elena.
IEEE Access.  11 (2023)  - p. 6293-6298 , 2023
Link: https://doi.org/10.1109/..
 
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8

Springer Handbook of Semiconductor Devices 

Springer Handbooks
Rudan, Massimo ; Brunetti, Rossella ; Reggiani, Susanna - 1st ed. 2023 . , 2023
Link: https://doi.org/10.1007/..
 
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9

TCAD study of the Holding-Voltage Modulation in Irradiated ..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Zunarelli, Laura ; Balestra, Luigi ; Reggiani, Susanna... - p. 1-6 , 2023
Link: https://doi.org/10.1109/..
 
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10

Thickness-dependent dielectric breakdown in thick amorphous..:

Giuliano, Federico ; Reggiani, Susanna ; Gnani, Elena...
Solid-State Electronics.  194 (2022)  - p. 108363 , 2022
Link: https://doi.org/10.1016/..
 
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11

Electron effective masses of ScxAl1−xN and AlxGa1−xN from f..:

Balestra, Luigi ; Gnani, Elena ; Reggiani, Susanna
Journal of Applied Physics.  132 (2022)  21 - p. , 2022
Link: https://doi.org/10.1063/..
 
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12

Application of the k ⋅ p Method to Device Simulation:

, In: Springer Handbook of Semiconductor Devices; Springer Handbooks,
Gnudi, Antonio ; Gnani, Elena ; Reggiani, Susanna. - p. 1491-1514 , 2022
Link: https://doi.org/10.1007/..
 
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13

Group velocity of electrons in 4H-SiC from Density Function..:

Balestra, Luigi ; Reggiani, Susanna ; Gnani, Elena.
Solid-State Electronics.  194 (2022)  - p. 108338 , 2022
Link: https://doi.org/10.1016/..
 
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14

Characterization and numerical analysis of breakdown in thi..:

Giuliano, Federico ; Reggiani, Susanna ; Gnani, Elena...
Solid-State Electronics.  192 (2022)  - p. 108256 , 2022
Link: https://doi.org/10.1016/..
 
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15

MOS Capacitors, MOS Transistors, and Charge-Transfer Device:

, In: Springer Handbook of Semiconductor Devices; Springer Handbooks,
Rudan, Massimo ; Reggiani, Susanna ; Baccarani, Giorgio - p. 331-369 , 2022
Link: https://doi.org/10.1007/..
 
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