E-LIB Suche - Ergebnisse für: Regolini, J.

1

A Simple Room Localization Method to Find Technology in a B..:

, In: IFMBE Proceedings; World Congress on Medical Physics and Biomedical Engineering 2018,

Regolini, J. ; Frosini, F. ; Ciagli, E.... - p. 321-325 , 2018

Link: https://doi.org/10.1007/..

2

Study of Metal Contamination in CMOS Image Sensors by Dark-..:

Domengie, F. ; Regolini, J. L. ; Bauza, D.
Journal of Electronic Materials. 39 (2010) 6 - p. 625-629 , 2010

Link: https://doi.org/10.1007/..

3

Passivation issues in active pixel CMOS image sensors:

Regolini, J.L. ; Benoit, D. ; Morin, P.
Microelectronics Reliability. 47 (2007) 4-5 - p. 739-742 , 2007

Link: https://doi.org/10.1016/..

4

Hydrogen desorption and diffusion in PECVD silicon nitride...:

Benoit, D. ; Regolini, J. ; Morin, P.
Microelectronic Engineering. 84 (2007) 9-10 - p. 2169-2172 , 2007

Link: https://doi.org/10.1016/..

5

Study of mechanisms involved in photoresist microlens forma..:

Audran, S. ; Faure, B. ; Mortini, B....
Microelectronic Engineering. 83 (2006) 4-9 - p. 1087-1090 , 2006

Link: https://doi.org/10.1016/..

6

Interface studies of silicon nitride dielectric layers:

Jacques, D. ; Regolini, J.L. ; Barla, K.
Journal of Non-Crystalline Solids. 280 (2001) 1-3 - p. 59-62 , 2001

Link: https://doi.org/10.1016/..

7

Spectroscopic ellipsometry of SixGe1−x/Si: a tool for compo..:

Ferrieu, F ; Ribot, P ; Regolini, J.L
Thin Solid Films. 373 (2000) 1-2 - p. 211-215 , 2000

Link: https://doi.org/10.1016/..

8

Optical characterization by spectroscopic ellipsometry of p..:

Ferrieu, F ; Morin, C ; Regolini, J.L
Thin Solid Films. 315 (1998) 1-2 - p. 316-321 , 1998

Link: https://doi.org/10.1016/..

9

Epitaxial growth of SiGe layers for BiCMOS applications:

Regolini, J.L. ; Pejnefors, J. ; Baffert, T....
Materials Science in Semiconductor Processing. 1 (1998) 3-4 - p. 317-323 , 1998

Link: https://doi.org/10.1016/..

10

Photofield interface impurity spectroscopy in blocked impur..:

Pasquier, S. ; Mény, C. ; Asadauskas, L....
Journal of Applied Physics. 83 (1998) 8 - p. 4222-4229 , 1998

Link: https://doi.org/10.1063/..

11

Single-wafer Si and SiGe processes for advanced ULSI techno..:

Bodnar, S. ; Morin, C. ; Regolini, J.L.
Thin Solid Films. 294 (1997) 1-2 - p. 11-14 , 1997

Link: https://doi.org/10.1016/..

12

Further study on selective TiSi2 deposition by CVD:

Maury, D. ; Gayet, P. ; Regolini, J.L.
Microelectronic Engineering. 37-38 (1997) - p. 435-440 , 1997

Link: https://doi.org/10.1016/..

13

Selective TiSi2 by CVD, one step further:

, In: European Workshop Materials for Advanced Metallization,,

Maury, D. ; Regolini, J.L. - p. 105,106,107 , 1997

Link: https://doi.org/10.1109/..

14

What is the role of the metal on the Fermi-level position a..:

Aubry-Fortuna, V. ; Perrossier, J.-L. ; Mamor, M....
Microelectronic Engineering. 37-38 (1997) - p. 573-579 , 1997

Link: https://doi.org/10.1016/..

15

Fermi-level pinning in Schottky diodes on IV–IV semiconduct..:

Mamor, M ; Perrossier, J.-L ; Aubry-Fortuna, V...
Thin Solid Films. 294 (1997) 1-2 - p. 141-144 , 1997

Link: https://doi.org/10.1016/..