E-LIB Suche - Ergebnisse für: Reimbold, Gilles

1

Low temperature influence on performance and transport of Ω..:

Paz, Bruna Cardoso ; Cassé, Mikaël ; Barraud, Sylvain...
Solid-State Electronics. 159 (2019) - p. 83-89 , 2019

Link: https://doi.org/10.1016/..

2

Methodology to separate channel conductions of two level ve..:

Paz, Bruna Cardoso ; Cassé, Mikaël ; Barraud, Sylvain...
Solid-State Electronics. 149 (2018) - p. 62-70 , 2018

Link: https://doi.org/10.1016/..

3

Electrical characterization of vertically stacked p-FET SOI..:

Cardoso Paz, Bruna ; Cassé, Mikaël ; Barraud, Sylvain...
Solid-State Electronics. 141 (2018) - p. 84-91 , 2018

Link: https://doi.org/10.1016/..

4

Characterization and modeling of dynamic variability induce..:

Garros, Xavier ; Laurent, Antoine ; Subirats, Alexandre...
Microelectronics Reliability. 80 (2018) - p. 100-108 , 2018

Link: https://doi.org/10.1016/..

5

(Invited) Dipoles in Gate-Stack/FDSOI Structure:

Reimbold, Gilles ; Leroux, Charles ; Suarez Segovia, Carlos...
ECS Transactions. 80 (2017) 1 - p. 237-245 , 2017

Link: https://doi.org/10.1149/..

6

Ion-assisted gate recess process induced damage in GaN chan..:

Ferrandis, Philippe ; Charles, Matthew ; Baines, Yannick...
Japanese Journal of Applied Physics. 56 (2017) 4S - p. 04CG01 , 2017

Link: https://doi.org/10.7567/..

7

Characterization of 2DEG in AlGaN/GaN heterostructure by Ha..:

Nifa, Iliass ; Leroux, Charles ; Torres, Alphonse...
Microelectronic Engineering. 178 (2017) - p. 128-131 , 2017

Link: https://doi.org/10.1016/..

8

Study of silicon n- and p-FET SOI nanowires concerning anal..:

Paz, Bruna Cardoso ; Cassé, Mikaël ; Barraud, Sylvain...
Solid-State Electronics. 128 (2017) - p. 60-66 , 2017

Link: https://doi.org/10.1016/..

9

Electrical properties of metal/Al2O3/In0.53Ga0.47As capacit..:

Ferrandis, Philippe ; Billaud, Mathilde ; Duvernay, Julien...
Journal of Applied Physics. 123 (2017) 16 - p. , 2017

Link: https://doi.org/10.1063/..

10

A New Method for Series Resistance Extraction of Nanometer ..:

Trevisoli, Renan ; Doria, Rodrigo Trevisoli ; de Souza, Michelly...
IEEE Transactions on Electron Devices. 64 (2017) 7 - p. 2797-2803 , 2017

Link: https://doi.org/10.1109/..

11

Impact of gate impedance on dielectric breakdown evaluation..:

Diab, Amer ; Garros, Xavier ; Rafik, Mustapha...
Microelectronic Engineering. 178 (2017) - p. 21-25 , 2017

Link: https://doi.org/10.1016/..

12

Effects of negative bias stress on trapping properties of A..:

Ferrandis, Philippe ; Charles, Matthew ; Gillot, Charlotte...
Microelectronic Engineering. 178 (2017) - p. 158-163 , 2017

Link: https://doi.org/10.1016/..

13

Physically-based extraction methodology for accurate MOSFET..:

Torrente, Giulio ; Coignus, Jean ; Renard, Sophie...
Microelectronics Reliability. 55 (2015) 9-10 - p. 1417-1421 , 2015

Link: https://doi.org/10.1016/..

14

HfO2/Al2O3/InGaAs MOSCAP Structures and InGaAs Plasma Nitri..:

Billaud, Mathilde ; Duvernay, Julien ; Grampeix, Helen...
ECS Transactions. 69 (2015) 5 - p. 9-13 , 2015

Link: https://doi.org/10.1149/..

15

(Invited) Temperature Impact on Reliablity and Manufacturin..:

Tirano, Sauveur ; Perniola, Luca ; Cagli, Carlo...
ECS Transactions. 61 (2014) 2 - p. 311-313 , 2014

Link: https://doi.org/10.1149/..