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Reisinger, H.
493  Ergebnisse:
Personensuche X
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1

A Recombination-Enhanced-Defect-Reaction-Based Model for th..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Grasser, T. ; Feil, M. ; Waschneck, K.... - p. 3B.1-1-3B.1-7 , 2024
Link: https://doi.org/10.1109/..
 
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2

335 "4Ms" Conversation in the Emergency Department: A Quali..:

Sheber, M. ; McKnight, M. ; Liebzeit, D....
Annals of Emergency Medicine.  80 (2022)  4 - p. S143 , 2022
Link: https://doi.org/10.1016/..
 
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3

Gate-switching-stress test: Electrical parameter stability ..:

Salmen, P. ; Feil, M.W. ; Waschneck, K....
Microelectronics Reliability.  135 (2022)  - p. 114575 , 2022
Link: https://doi.org/10.1016/..
 
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4

Influence of high-voltage gate-oxide pulses on the BTI beha..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Maas, S. ; Reisinger, H. ; Aichinger, T.. - p. 1-6 , 2020
Link: https://doi.org/10.1109/..
 
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5

Innovative mitigation measures for electrostatic charge bui..:

Reisinger, H. ; Griebler, P. ; Lang, S.
e & i Elektrotechnik und Informationstechnik.  135 (2018)  8 - p. 563-566 , 2018
Link: https://doi.org/10.1007/..
 
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6

NBTI: Experimental investigation, physical modelling, circu..:

Schlünder, C. ; Puschkarsky, K. ; Rott, G.A...
Microelectronics Reliability.  82 (2018)  - p. 1-10 , 2018
Link: https://doi.org/10.1016/..
 
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7

Implications of gate-sided hydrogen release for post-stress..:

, In: 2017 IEEE International Reliability Physics Symposium (IRPS),
Grasser, T. ; Waltl, M. ; Puschkarsky, K.... - p. 6A-2.1-6A-2.6 , 2017
Link: https://doi.org/10.1109/..
 
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8

SrTiOx for sub-20nm DRAM technology nodes—Characterization ..:

Kaczer, B. ; Larcher, L. ; Vandelli, L....
Microelectronic Engineering.  147 (2015)  - p. 126-129 , 2015
Link: https://doi.org/10.1016/..
 
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9

New insights on the PBTI phenomena in SiON pMOSFETs:

Rott, K. ; Reisinger, H. ; Aresu, S....
Microelectronics Reliability.  52 (2012)  9-10 - p. 1891-1894 , 2012
Link: https://doi.org/10.1016/..
 
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10

On the temperature and voltage dependence of short-term neg..:

Hehenberger, Ph. ; Wagner, P.-J. ; Reisinger, H..
Microelectronics Reliability.  49 (2009)  9-11 - p. 1013-1017 , 2009
Link: https://doi.org/10.1016/..
 
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11

A study of NBTI by the statistical analysis of the properti..:

, In: 2009 IEEE International Integrated Reliability Workshop Final Report,
Reisinger, H. ; Grasser, T. ; Schlunder, C. - p. None , 2009
Link: https://doi.org/10.1109/..
 
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12

Simultaneous Extraction of Recoverable and Permanent Compon..:

, In: 2007 IEEE International Electron Devices Meeting,
Grasser, T. ; Kaczer, B. ; Hehenberger, P.... - p. None , 2007
Link: https://doi.org/10.1109/..
 
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13

A model for multistep trap-assisted tunneling in thin high-..:

Blank, O. ; Reisinger, H. ; Stengl, R....
Journal of Applied Physics.  97 (2005)  4 - p. , 2005
Link: https://doi.org/10.1063/..
 
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14

Charge trapping memory structures with Al2O3 trapping diele..:

Specht, M. ; Reisinger, H. ; Hofmann, F....
Solid-State Electronics.  49 (2005)  5 - p. 716-720 , 2005
Link: https://doi.org/10.1016/..
 
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15

Transient conduction in multidielectric silicon–oxide–nitri..:

Bachhofer, H. ; Reisinger, H. ; Bertagnolli, E..
Journal of Applied Physics.  89 (2001)  5 - p. 2791-2800 , 2001
Link: https://doi.org/10.1063/..
 
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