E-LIB Suche - Ergebnisse für: Reisinger, Hans

1

Gate Switching Instability in Silicon Carbide MOSFETs—Part ..:

Grasser, Tibor ; Feil, Maximilian W. ; Waschneck, Katja...
IEEE Transactions on Electron Devices. 71 (2024) 7 - p. 4218-4226 , 2024

Link: https://doi.org/10.1109/..

2

Prompt Shift of On-State Resistance in LDMOS Devices: Cause..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Prigann, Sven ; Feil, Maximilian W. ; Reisinger, Hans... - p. 394-397 , 2024

Link: https://doi.org/10.1109/..

3

Gate Switching Instability in Silicon Carbide MOSFETs—Part ..:

Feil, Maximilian W. ; Waschneck, Katja ; Reisinger, Hans...
IEEE Transactions on Electron Devices. 71 (2024) 7 - p. 4210-4217 , 2024

Link: https://doi.org/10.1109/..

4

Recent Developments in Understanding the Gate Switching Ins..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),

Feil, Maximilian W. ; Waschneck, Katja ; Reisinger, Hans... - p. 1-9 , 2023

Link: https://doi.org/10.1109/..

5

Modeling of NBTI Induced Threshold Voltage Shift Based on A..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),

Bogner, Christian ; Schlunder, Christian ; Waltl, Michael.. - p. 1-7 , 2023

Link: https://doi.org/10.1109/..

6

Towards Understanding the Physics of Gate Switching Instabi..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),

Feil, Maximilian W. ; Waschneck, Katja ; Reisinger, Hans... - p. 1-10 , 2023

Link: https://doi.org/10.1109/..

7

On the Frequency Dependence of the Gate Switching Instabili..:

Feil, Maximilian Wolfgang ; Waschneck, Katja ; Reisinger, Hans...
Materials Science Forum. 1092 (2023) - p. 109-117 , 2023

Link: https://doi.org/10.4028/..

8

On the Role of NBTI and PBTI Induced Mobility Degradation f..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),

Bogner, Christian ; Reisinger, Hans ; Lahbib, Insaf... - p. 1-7 , 2023

Link: https://doi.org/10.1109/..

9

Electrically stimulated optical spectroscopy of interface d..:

Feil, Maximilian W. ; Reisinger, Hans ; Kabakow, André...
Communications Engineering. 2 (2023) 1 - p. , 2023

Link: https://doi.org/10.1038/..

10

Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circu..:

Waltl, Michael ; Hernandez, Yoanlys ; Schleich, Christian...
Materials Science Forum. 1062 (2022) - p. 688-695 , 2022

Link: https://doi.org/10.4028/..

11

Mixed Hot-Carrier/Bias Temperature Instability Degradation ..:

Jech, Markus ; Rott, Gunnar ; Reisinger, Hans...
IEEE Transactions on Electron Devices. 67 (2020) 8 - p. 3315-3322 , 2020

Link: https://doi.org/10.1109/..

12

The Impact of Interfacial Charge Trapping on the Reproducib..:

Feil, Maximilian W. ; Huerner, Andreas ; Puschkarsky, Katja...
Crystals. 10 (2020) 12 - p. 1143 , 2020

Link: https://doi.org/10.3390/..

13

Degradation and recovery of variability due to BTI:

Schlünder, Christian ; Berthold, Jörg ; Proebster, Fabian...
Microelectronics Reliability. 64 (2016) - p. 179-184 , 2016

Link: https://doi.org/10.1016/..

14

Mixture of negative bias temperature instability and hot-ca..:

Rott, Gunnar Andreas ; Rott, Karina ; Reisinger, Hans..
Microelectronics Reliability. 54 (2014) 9-10 - p. 2310-2314 , 2014

Link: https://doi.org/10.1016/..

15

Time-dependent defect spectroscopy for characterization of ..:

Grasser, Tibor ; Reisinger, Hans ; Wagner, Paul-Jürgen.
Physical Review B. 82 (2010) 24 - p. , 2010

Link: https://doi.org/10.1103/..