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Remesh, Nayana
9  Ergebnisse:
Personensuche X
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1

Nitrogen rich PECVD silicon nitride for passivation of Si a..:

Subhani, Khawaja Nizammuddin ; Remesh, Nayana ; S, Niranjan...
Solid-State Electronics.  186 (2021)  - p. 108188 , 2021
Link: https://doi.org/10.1016/..
 
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2

An artificial synaptic transistor using an α-In2Se3 van der..:

Mohta, Neha ; Rao, Ankit ; Remesh, Nayana..
RSC Advances.  11 (2021)  58 - p. 36901-36912 , 2021
Link: https://doi.org/10.1039/..
 
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3

Re-engineering transition layers in AlGaN/GaN HEMT on Si fo..:

Remesh, Nayana ; Chandrasekar, Hareesh ; Venugopalrao, Anirudh...
Journal of Applied Physics.  130 (2021)  7 - p. , 2021
Link: https://doi.org/10.1063/..
 
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4

Growth-Microstructure-Device Performance Correlations for I..:

, In: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Kalra, Anisha ; Rathkanthiwar, Shashwat ; Remesh, Nayana... - p. 1-4 , 2020
Link: https://doi.org/10.1109/..
 
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5

Impact of pits formed in the AlN nucleation layer on buffer..:

Rathkanthiwar, Shashwat ; Kalra, Anisha ; Remesh, Nayana...
Journal of Applied Physics.  127 (2020)  21 - p. , 2020
Link: https://doi.org/10.1063/..
 
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6

A Novel Technique to Investigate the Role of Traps in the O..:

Remesh, Nayana ; Kumar, Sandeep ; Guiney, Ivor...
physica status solidi (a).  217 (2019)  7 - p. , 2019
Link: https://doi.org/10.1002/..
 
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7

Interface traps at Al 2 O 3 /InAlN/GaN MOS-HEMT -on- 200 mm..:

Kumar, Sandeep ; Remesh, Nayana ; Dolmanan, S.B....
Solid-State Electronics.  137 (2017)  - p. 117-122 , 2017
Link: https://doi.org/10.1016/..
 
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8

Low resistivity contact on n-type Ge using low work-functio..:

Dev, Sachin ; Remesh, Nayana ; Rawal, Yaksh...
Applied Physics Letters.  108 (2016)  10 - p. , 2016
Link: https://doi.org/10.1063/..
 
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9

An artificial synaptic transistor using an α-In(2)Se(3) van..:

Mohta, Neha ; Rao, Ankit ; Remesh, Nayana..
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9043574/.  , 2021
Link: http://www.ncbi.nlm.nih...
 
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