Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
Renz, Arne Benjamin
58  Ergebnisse:
Personensuche X
?
1

Design and Optimization of 3.3 kV Silicon Carbide Semi-Supe..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Melnyk, Kyrylo ; Renz, Arne Benjamin ; Cao, Qinze... - p. 132-135 , 2024
Link: https://doi.org/10.1109/..
 
?
2

Lateral 1200V SiC schottky barrier diode with single event ..:

Qi, Yunyi ; Gammon, Peter Michael ; Renz, Arne Benjamin...
Power Electronic Devices and Components.  8 (2024)  - p. 100068 , 2024
Link: https://doi.org/10.1016/..
 
?
3

Mechanisms of Silicon Surface Passivation by Negatively Cha..:

Wratten, Ailish ; Pain, Sophie L. ; Walker, David...
IEEE Journal of Photovoltaics.  13 (2023)  1 - p. 40-47 , 2023
Link: https://doi.org/10.1109/..
 
?
4

The optimisation, fabrication and comparison of 10 kV-rated..:

, In: 2023 IEEE Energy Conversion Congress and Exposition (ECCE),
Renz, Arne Benjamin ; Dai, Tianxiang ; Antoniou, Marina... - p. 5337-5341 , 2023
Link: https://doi.org/10.1109/..
 
?
5

Auxetic piezoelectric effect in heterostructures:

Yang, Ming-Min ; Zhu, Tian-Yuan ; Renz, Arne Benjamin...
Nature Materials.  23 (2023)  1 - p. 95-100 , 2023
Link: https://doi.org/10.1038/..
 
?
6

High Mobility Silicon Dioxide Layers on 4H-SiC Deposited by..:

Renz, Arne Benjamin ; Cao, Qin Ze ; Vavasour, Oliver James...
Materials Science Forum.  1090 (2023)  - p. 147-151 , 2023
Link: https://doi.org/10.4028/..
 
?
7

Robust and Area Efficient 4H-SiC 1.2 and 3.3 kV Floating Fi..:

, In: 2023 IEEE Energy Conversion Congress and Exposition (ECCE),
Melnyk, Kyrylo ; Gammon, Peter Michael ; Renz, Arne Benjamin... - p. 5342-5349 , 2023
Link: https://doi.org/10.1109/..
 
?
8

Optimization of SiC device topologies for Single Event Immu..:

, In: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe),
Qi, Yunyi ; Antoniou, Marina ; Clarke Baker, Guy William... - p. 1-4 , 2022
Link: https://doi.org/10.1109/..
 
?
9

The successful implementation of a phosphorous-based surfac..:

, In: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe),
Renz, Arne Benjamin ; Clarke Baker, Guy William ; Shah, Vishal Ajit... - p. 1-4 , 2022
Link: https://doi.org/10.1109/..
 
?
10

The Optimization of 3.3 kV 4H-SiC JBS Diodes:

Renz, Arne Benjamin ; Shah, Vishal Ajit ; Vavasour, Oliver James...
IEEE Transactions on Electron Devices.  69 (2022)  1 - p. 298-303 , 2022
Link: https://doi.org/10.1109/..
 
?
11

The optimisation of a 15 kV 4H-silicon carbide integrated g..:

, In: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe),
Cao, Qinze ; Gammon, Peter Michael ; Renz, Arne Benjamin... - p. 1-5 , 2022
Link: https://doi.org/10.1109/..
 
?
12

A study on free-standing 3C-SiC bipolar power diodes:

Li, Fan ; Renz, Arne Benjamin ; Pérez-Tomás, Amador...
Applied Physics Letters.  118 (2021)  24 - p. 242101 , 2021
Link: https://doi.org/10.1063/..
 
?
13

A Method to Contain the Temperature Rise of a Press-Pack Th..:

, In: 2019 IEEE Energy Conversion Congress and Exposition (ECCE),
Bashar, Erfan ; Rogers, Dan ; Wu, Ruizhu... - p. 3311-3317 , 2019
Link: https://doi.org/10.1109/..
 
?
14

Mechanisms of silicon surface passivation by negatively cha..:

Wratten, Ailish ; Pain, Sophie L ; Walker, David Johannes...
https://freidok.uni-freiburg.de/data/234114.  , 2023
Link: https://freidok.uni-frei..
 
?
15

Auxetic piezoelectric effect in heterostructures:

Yang, Ming-Min ; Zhu, Tian-Yuan ; Renz, Arne Benjamin...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10769876/.  , 2023
Link: http://www.ncbi.nlm.nih...
 
1-15