Reverchon, J
1336  Ergebnisse:
Personensuche X
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6

Dynamics of AlGaN based detectors in the deep-UV:

Mazzeo, G. ; Reverchon, J.-L. ; Conte, G...
Solid-State Electronics.  52 (2008)  5 - p. 795-800 , 2008
 
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7

Generation–recombination reduction in InAsSb photodiodes:

Carras, M ; Renard, C ; Marcadet, X...
Semiconductor Science and Technology.  21 (2006)  12 - p. 1720-1723 , 2006
 
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10

Light-ion beam for microelectronic applications:

Hirsch, L. ; Tardy, P. ; Wantz, G....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  240 (2005)  1-2 - p. 265-270 , 2005
 
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11

Design and fabrication of infrared detectors based on latti..:

Reverchon, J.L. ; Carras, M. ; Marre, G....
Physica E: Low-dimensional Systems and Nanostructures.  20 (2004)  3-4 - p. 519-522 , 2004
 
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12

Optimization, design and fabrication of a non-cryogenic qua..:

Vinter, B. ; Reverchon, J.L. ; Marre, G....
Comptes Rendus Physique.  4 (2003)  10 - p. 1103-1108 , 2003
 
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13

Submicron metal–semiconductor–metal ultraviolet detectors b..:

Duboz, J. Y. ; Reverchon, J. L. ; Adam, D....
Journal of Applied Physics.  92 (2002)  9 - p. 5602-5604 , 2002
 
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14

Field distribution and collection efficiency in an AlGaN me..:

Hirsch, L. ; Moretto, P. ; Duboz, J. Y....
Journal of Applied Physics.  91 (2002)  9 - p. 6095-6098 , 2002
 
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15

Photoconductance measurements and Stokes shift in InGaN all..:

Reverchon, J.-L ; Huet, F ; Poisson, M.-A...
Materials Science and Engineering: B.  82 (2001)  1-3 - p. 197-199 , 2001
 
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