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Rideau, D.
836  Ergebnisse:
Personensuche X
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1

Band structure and optical absorption of strained Si1−x−yGe..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Rideau, D. ; Jeannin, O. ; Arnaud, A.... - p. 373-376 , 2023
Link: https://doi.org/10.23919..
 
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2

Direct Measurements and Modeling of Avalanche Dynamics and ..:

, In: ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC),
Rideau, D. ; Uhring, W. ; Bianchi, R. A.... - p. 144-147 , 2023
Link: https://doi.org/10.1109/..
 
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3

Prediction of the evolution of defects induced by the heate..:

Julliard, P.L. ; Johnsson, A. ; Zographos, N....
Solid-State Electronics.  200 (2023)  - p. 108521 , 2023
Link: https://doi.org/10.1016/..
 
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4

Quantum Modeling of Semiconductors Leakage Currents Induced..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Jay, A. ; Mesnard, C. ; Nicholson, I.... - p. 141-144 , 2023
Link: https://doi.org/10.23919..
 
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5

Simulation in action: the application of modelling to SPAD ..:

, In: 2023 International Electron Devices Meeting (IEDM),
Pellegrini, S. ; Nicholson, I. ; Helleboid, R.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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6

Avalanche breakdown and quenching in Ge SPAD using 3D Monte..:

Dollfus, P. ; Saint-Martin, J. ; Cazimajou, T....
Solid-State Electronics.  194 (2022)  - p. 108361 , 2022
Link: https://doi.org/10.1016/..
 
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7

A self-sustaining Single Photon Avalanche Diode Model:

, In: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC),
Rink, S. ; Quenette, V. ; Manouvrier, J.R.... - p. 281-284 , 2022
Link: https://doi.org/10.1109/..
 
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8

Verilog-A model for avalanche dynamics and quenching in Sin..:

, In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
oussaiti, Y. ; Rideau, D. ; Manouvrier, J.R.... - p. 145-148 , 2020
Link: https://doi.org/10.23919..
 
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9

Implant heating contribution to amorphous layer formation: ..:

, In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Julliard, P.L. ; Dumas, P. ; Monsieur, F.... - p. 43-46 , 2020
Link: https://doi.org/10.23919..
 
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10

Advances in 3D CMOS image sensors optical modeling: combini..:

, In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Vianne, Benjamin ; Crocherie, Axel ; Guissi, Sofiane... - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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11

Impact of strain on access resistance in planar and nanowir..:

, In: 2017 Symposium on VLSI Technology,
Berthelon, R. ; Andneu, F. ; Triozon, F.... - p. T224-T225 , 2017
Link: https://doi.org/10.23919..
 
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12

Modeled optical properties of SiGe and Si layers compared t..:

Kriso, C. ; Triozon, F. ; Delerue, C....
Solid-State Electronics.  129 (2017)  - p. 93-96 , 2017
Link: https://doi.org/10.1016/..
 
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13

Reliable gate stack and substrate parameter extraction base..:

Mohamad, B. ; Leroux, C. ; Rideau, D....
Solid-State Electronics.  128 (2017)  - p. 10-16 , 2017
Link: https://doi.org/10.1016/..
 
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14

4 The novel p.Cys1410* mutation causes severe neonatal CF i..:

Mekki, C. ; Mirlesse, V. ; Le Floch, A....
Journal of Cystic Fibrosis.  16 (2017)  - p. S63-S64 , 2017
Link: https://doi.org/10.1016/..
 
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15

How to assess hemodynamic status in very preterm newborns i..:

Escourrou, G ; Renesme, L ; Zana, E...
Journal of Perinatology.  37 (2017)  9 - p. 987-993 , 2017
Link: https://doi.org/10.1038/..
 
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