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2024 IEEE Latin American Electron Devices Conference (LAEDC) ,
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Temperature Dependence of Quasi–Ballistic Transport in n–Ty..:
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2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) ,
3
CMOS Scaling by Nanosheet Device Architectures and Backside..:
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2023 IEEE International Reliability Physics Symposium (IRPS) ,
5
Reliability challenges in Forksheet Devices: (Invited Paper:
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2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
7
Novel Low Thermal Budget CMOS RMG: Performance and Reliabil..:
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2022 International Electron Devices Meeting (IEDM) ,
8
Forksheet FETs with Bottom Dielectric Isolation, Self-Align..:
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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
9
High Performance Thermally Resistant FinFETs DRAM Periphera..:
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2022 International Electron Devices Meeting (IEDM) ,
10
FinFETs with Thermally Stable RMG Gate Stack for Future DRA..:
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2021 IEEE International Electron Devices Meeting (IEDM) ,
11
Comparison of Electrical Performance of Co-Integrated Forks..:
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2020 IEEE Symposium on VLSI Technology ,
12
Buried Power Rail Integration with Si FinFETs for CMOS Scal..:
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2019 IEEE International Integrated Reliability Workshop (IIRW) ,
13
Impact of Fin Height on Bias Temperature Instability of Mem..:
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2019 IEEE International Electron Devices Meeting (IEDM) ,
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