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X
Rochette, F.
331  Ergebnisse:
Personensuche X
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1

Dark Current Evolution in Irradiated MWIR HgCdTe Photodiode:

Dinand, S. ; Gravrand, O. ; Baier, N....
Journal of Electronic Materials.  52 (2023)  11 - p. 7103-7113 , 2023
Link: https://doi.org/10.1007/..
 
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2

MTF Characterization of Small Pixel Pitch IR Cooled Photodi..:

Yèche, A. ; Gravrand, O. ; Ferron, A....
Journal of Electronic Materials.  49 (2020)  11 - p. 6900-6907 , 2020
Link: https://doi.org/10.1007/..
 
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3

Analysis of the Electrical Properties of Different HgCdTe P..:

Mangin, L. ; Rochette, F. ; Lobre, C....
Journal of Electronic Materials.  48 (2019)  10 - p. 6084-6092 , 2019
Link: https://doi.org/10.1007/..
 
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4

Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent ..:

Kerlain, A. ; Brunner, A. ; Sam-Giao, D....
Journal of Electronic Materials.  45 (2016)  9 - p. 4557-4562 , 2016
Link: https://doi.org/10.1007/..
 
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5

MTF Issues in Small-Pixel-Pitch Planar Quantum IR Detectors:

Gravrand, O. ; Baier, N. ; Ferron, A....
Journal of Electronic Materials.  43 (2014)  8 - p. 3025-3032 , 2014
Link: https://doi.org/10.1007/..
 
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6

Development of a Method for Chemical–Mechanical Preparation..:

Pelenc, D. ; Merlin, J. ; Etcheberry, A....
Journal of Electronic Materials.  43 (2014)  8 - p. 3004-3011 , 2014
Link: https://doi.org/10.1007/..
 
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7

Strain sensitivity of gate leakage in strained-SOI nMOSFETs..:

Rochette, F. ; Garros, X. ; Reimbold, G....
Microelectronic Engineering.  86 (2009)  7-9 - p. 1897-1900 , 2009
Link: https://doi.org/10.1016/..
 
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8

A comprehensive study of magnetoresistance mobility in shor..:

Cassé, M. ; Rochette, F. ; Thevenod, L....
Journal of Applied Physics.  105 (2009)  8 - p. , 2009
Link: https://doi.org/10.1063/..
 
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9

Piezoresistance effect of strained and unstrained fully-dep..:

Rochette, F. ; Cassé, M. ; Mouis, M....
Solid-State Electronics.  53 (2009)  3 - p. 392-396 , 2009
Link: https://doi.org/10.1016/..
 
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10

Modeling and direct extraction of band offset induced by st..:

Garros, X. ; Rochette, F. ; Andrieu, F....
Journal of Applied Physics.  105 (2009)  11 - p. , 2009
Link: https://doi.org/10.1063/..
 
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11

Experimental evidence and extraction of the electron mass v..:

Rochette, F. ; Cassé, M. ; Mouis, M....
Solid-State Electronics.  51 (2007)  11-12 - p. 1458-1465 , 2007
Link: https://doi.org/10.1016/..
 
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12

Impact of Mobility Boosters (XsSOI, CESL, TiN gate) on the ..:

, In: 2007 IEEE Symposium on VLSI Technology,
Andrieu, F. ; Aussenac, F. ; Feruglio, S.... - p. None , 2007
Link: https://doi.org/10.1109/..
 
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13

High-Field Electron Mobility in Biaxially-tensile Strained ..:

, In: 2007 IEEE Symposium on VLSI Technology,
Bonno, O. ; Barraud, S. ; Andrieu, F.... - p. None , 2007
Link: https://doi.org/10.1109/..
 
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14

25nm Short and Narrow Strained FDSOI with TiN/HfO2 Gate Sta..:

, In: 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.,
Deleonibus, S. ; Mazure, C. ; Gaud, P.... - p. 134-135 , 2006
Link: https://doi.org/10.1109/..
 
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15

A mediatorless biosensor for putrescine using multiwalled c..:

Rochette, J.-F. ; Sacher, E. ; Meunier, M..
Analytical Biochemistry.  336 (2005)  2 - p. 305-311 , 2005
Link: https://doi.org/10.1016/..
 
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