E-LIB Suche - Ergebnisse für: Romanczyk, Brian

1

Demonstration of HCl-Based Selective Wet Etching for N-Pola..:

Kayede, Emmanuel ; Akso, Emre ; Romanczyk, Brian...
Crystals. 14 (2024) 6 - p. 485 , 2024

2

Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess H..:

Akso, Emre ; Collins, Henry ; Khan, Kamruzzaman...
IEEE Microwave and Wireless Technology Letters. 34 (2024) 2 - p. 183-186 , 2024

Link: https://doi.org/10.1109/..

3

Record D-Band Performance From Prematched N-Polar GaN-on-Sa..:

Akso, Emre ; Li, Weiyi ; Clymore, Christopher...
IEEE Microwave and Wireless Technology Letters. 34 (2024) 4 - p. 395-398 , 2024

Link: https://doi.org/10.1109/..

4

First Demonstration of Four-Finger N-polar GaN HEMT Exhibit..:

Akso, Emre ; Collins, Henry ; Clymore, Christopher...
IEEE Microwave and Wireless Technology Letters. 33 (2023) 6 - p. 683-686 , 2023

Link: https://doi.org/10.1109/..

5

Compact Modeling of N-Polar GaN HEMTs for Intermodulation D..:

Karnaty, Rohit R. ; Shrestha, Pawana ; Guidry, Matthew...
IEEE Transactions on Microwave Theory and Techniques. 71 (2023) 5 - p. 1932-1944 , 2023

Link: https://doi.org/10.1109/..

6

Record RF Power Performance at 94 GHz From Millimeter-Wave ..:

Li, Weiyi ; Romanczyk, Brian ; Guidry, Matthew...
IEEE Transactions on Electron Devices. 70 (2023) 4 - p. 2075-2080 , 2023

Link: https://doi.org/10.1109/..

7

Record 1 W output power from a single N-Polar GaN MISHEMT a..:

, In: 2023 Device Research Conference (DRC),

Akso, Emre ; Clymore, Christopher ; Liu, Wenjian... - p. 1-2 , 2023

Link: https://doi.org/10.1109/..

8

Modeling and Measurement of Dual-Threshold N-polar GaN HEMT..:

, In: 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,

Karnaty, Rohit R. ; Shrestha, Pawana ; Guidry, Matthew... - p. 20-23 , 2023

Link: https://doi.org/10.1109/..

9

GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET Wit..:

Raj, Aditya ; Krishna, Athith ; Romanczyk, Brian...
IEEE Electron Device Letters. 44 (2023) 1 - p. 9-12 , 2023

Link: https://doi.org/10.1109/..

10

Improved N-polar GaN mm-wave Linearity, Efficiency, and Noi..:

, In: 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,

Guidry, Matthew ; Shrestha, Pawana ; Liu, Wenjian... - p. 291-294 , 2022

Link: https://doi.org/10.1109/..

11

Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs:

, In: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA),

Chiocchetta, Francesca ; Calascione, Claudia ; De Santi, Carlo... - p. 90-94 , 2021

Link: https://doi.org/10.1109/..

12

Evaluation of linearity at 30 GHz for N-polar GaN deep rece..:

Romanczyk, Brian ; Guidry, Matthew ; Zheng, Xun...
Applied Physics Letters. 119 (2021) 7 - p. , 2021

Link: https://doi.org/10.1063/..

13

W-Band Power Performance of SiN-Passivated N-Polar GaN Deep..:

Romanczyk, Brian ; Zheng, Xun ; Guidry, Matthew...
IEEE Electron Device Letters. 41 (2020) 3 - p. 349-352 , 2020

Link: https://doi.org/10.1109/..

14

High-electron-mobility transistors with metal-organic chemi..:

Koksaldi, Onur S ; Romanczyk, Brian ; Haller, Jeffrey...
Semiconductor Science and Technology. 35 (2020) 12 - p. 124004 , 2020

Link: https://doi.org/10.1088/..

15

Improved operation stability of in situ AlSiO dielectric gr..:

Sayed, Islam ; Liu, Wenjian ; Romanczyk, Brian...
Applied Physics Express. 13 (2020) 6 - p. 061010 , 2020

Link: https://doi.org/10.35848..