E-LIB Suche - Ergebnisse für: Rossel, C.

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Physica status solidi

Volume 59, Number 1: May 16 Physica status solidi ; Volume 59, Number 1, A

Abraimov, V. V ; Aiyer, R ; Al-Mukhtar, J. H... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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DES science portal: Computing photometric redshifts:

Gschwend, J. ; Rossel, A.C. ; Ogando, R.L.C....
Astronomy and Computing. 25 (2018) - p. 58-80 , 2018

Link: https://doi.org/10.1016/..

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Synthesis and modification of poly(ethyl 2-(imidazol-1-yl)a..:

Rössel, C. ; Billing, M. ; Görls, H....
Polymer. 127 (2017) - p. 182-191 , 2017

Link: https://doi.org/10.1016/..

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Development of a new nuclide generation and depletion code ..:

Kasselmann, S. ; Schitthelm, O. ; Tantillo, F....
Nuclear Engineering and Design. 306 (2016) - p. 154-159 , 2016

Link: https://doi.org/10.1016/..

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ELIAS – "ElternImpulsAnleitungSprache":

Frey, H ; Rossel, C
Das Gesundheitswesen. 77 (2015) 4 - p. , 2015

Link: https://doi.org/10.1055/..

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Towards large size substrates for III-V co-integration made..:

Daix, N. ; Uccelli, E. ; Czornomaz, L....
APL Materials. 2 (2014) 8 - p. 086104 , 2014

Link: https://doi.org/10.1063/..

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Temperature dependence of the transverse piezoelectric coef..:

Rossel, C. ; Sousa, M. ; Abel, S....
Journal of Applied Physics. 115 (2014) 3 - p. , 2014

Link: https://doi.org/10.1063/..

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Strain effects on n-InGaAs heterostructure-on-insulator mad..:

Rossel, C. ; Weigele, P. ; Czornomaz, L....
Solid-State Electronics. 98 (2014) - p. 88-92 , 2014

Link: https://doi.org/10.1016/..

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CMOS compatible self-aligned S/D regions for implant-free I..:

Czornomaz, L. ; El Kazzi, M. ; Hopstaken, M....
Solid-State Electronics. 74 (2012) - p. 71-76 , 2012

Link: https://doi.org/10.1016/..

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Thermally stable, sub-nanometer equivalent oxide thickness ..:

El Kazzi, M. ; Czornomaz, L. ; Rossel, C....
Applied Physics Letters. 100 (2012) 6 - p. , 2012

Link: https://doi.org/10.1063/..

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Sub-nm equivalent oxide thickness on Si-passivated GaAs cap..:

El Kazzi, M. ; Czornomaz, L. ; Webb, D. J....
Applied Physics Letters. 99 (2011) 5 - p. , 2011

Link: https://doi.org/10.1063/..

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GaAs on 200 mm Si wafers via thin temperature graded Ge buf..:

Richter, M. ; Rossel, C. ; Webb, D.J....
Journal of Crystal Growth. 323 (2011) 1 - p. 387-392 , 2011

Link: https://doi.org/10.1016/..

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1.2nm capacitance equivalent thickness gate stacks on Si-pa..:

El Kazzi, M. ; Webb, D.J. ; Czornomaz, L....
Microelectronic Engineering. 88 (2011) 7 - p. 1066-1069 , 2011

Link: https://doi.org/10.1016/..

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Structural and electrical properties of fully strained (In,..:

Marchiori, C. ; Kiewra, E. ; Fompeyrine, J....
Applied Physics Letters. 96 (2010) 21 - p. , 2010

Link: https://doi.org/10.1063/..

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H plasma cleaning and a-Si passivation of GaAs for surface ..:

Marchiori, C. ; Webb, D. J. ; Rossel, C....
Journal of Applied Physics. 106 (2009) 11 - p. , 2009

Link: https://doi.org/10.1063/..