E-LIB Suche - Ergebnisse für: Rossetto, I.

1

On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation ..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),

Boito, M. ; Fregolent, M. ; De Santi, C.... - p. 1-5 , 2024

Link: https://doi.org/10.1109/..

2

AWARENESS AND USE OF STATE FAMILY PLANNING PROGRAMS AMONG C..:

Yarger, J ; Hopkins, K ; Rossetto, I..
Contraception. 127 (2023) - p. 110251 , 2023

Link: https://doi.org/10.1016/..

3

P054Medication abortion via telemedicine: Interest among yo..:

Harper, CC ; Elmes, S ; Yarger, J...
Contraception. 116 (2022) - p. 86 , 2022

Link: https://doi.org/10.1016/..

4

P078Use of direct-to-consumer telemedicine companies for co..:

Yarger, J ; Elmes, S ; Rossetto, I...
Contraception. 116 (2022) - p. 91 , 2022

Link: https://doi.org/10.1016/..

5

Review on the degradation of GaN-based lateral power transi..:

De Santi, C. ; Buffolo, M. ; Rossetto, I....
e-Prime - Advances in Electrical Engineering, Electronics and Energy. 1 (2021) - p. 100018 , 2021

Link: https://doi.org/10.1016/..

6

POSTER ABSTRACTS:

Yarger, J ; Hopkins, K ; Elmes, S...
Contraception. 104 (2021) 4 - p. 466 , 2021

Link: https://doi.org/10.1016/..

7

Transmission line pulse (TLP) as integrative method for the..:

Merlo, L. ; Rossetto, I. ; Cerati, L....
Microelectronics Reliability. 100-101 (2019) - p. 113463 , 2019

Link: https://doi.org/10.1016/..

8

Field- and current-driven degradation of GaN-based power HE..:

Rossetto, I. ; Meneghini, M. ; Canato, E....
Microelectronics Reliability. 76-77 (2017) - p. 298-303 , 2017

Link: https://doi.org/10.1016/..

9

Reliability and parasitic issues in GaN-based power HEMTs: ..:

Meneghesso, G ; Meneghini, M ; Rossetto, I...
Semiconductor Science and Technology. 31 (2016) 9 - p. 093004 , 2016

Link: https://doi.org/10.1088/..

10

Normally-off GaN-HEMTs with p-type gate: Off-state degradat..:

Meneghini, M. ; Hilt, O. ; Fleury, C....
Microelectronics Reliability. 58 (2016) - p. 177-184 , 2016

Link: https://doi.org/10.1016/..

11

Impact of gate insulator on the dc and dynamic performance ..:

Rossetto, I. ; Meneghini, M. ; Bisi, D....
Microelectronics Reliability. 55 (2015) 9-10 - p. 1692-1696 , 2015

Link: https://doi.org/10.1016/..

12

Impact of proton fluence on DC and trapping characteristics..:

Rossetto, I. ; Rampazzo, F. ; Gerardin, S....
Solid-State Electronics. 113 (2015) - p. 15-21 , 2015

Link: https://doi.org/10.1016/..

13

Effects of buffer compensation strategies on the electrical..:

Bisi, D. ; Stocco, A. ; Rossetto, I....
Microelectronics Reliability. 55 (2015) 9-10 - p. 1662-1666 , 2015

Link: https://doi.org/10.1016/..

14

Influence of different carbon doping on the performance and..:

Rossetto, I. ; Rampazzo, F. ; Meneghini, M....
Microelectronics Reliability. 54 (2014) 9-10 - p. 2248-2252 , 2014

Link: https://doi.org/10.1016/..

15

Reverse-bias stress of high electron mobility transistors: ..:

Rossetto, I. ; Meneghini, M. ; Meneghesso, G..
Microelectronics Reliability. 53 (2013) 9-11 - p. 1456-1460 , 2013

Link: https://doi.org/10.1016/..