E-LIB Suche - Ergebnisse für: Roule, A.

1

Quantifying nitrogen in GeSbTe:N alloys:

Jeynes, C. ; Nolot, E. ; Costa, C....
Journal of Analytical Atomic Spectrometry. 35 (2020) 4 - p. 701-712 , 2020

Link: https://doi.org/10.1039/..

2

Grazing incident X-ray fluorescence combined with X-ray ref..:

Pessoa, W. ; Roule, A. ; Nolot, E....
Spectrochimica Acta Part B: Atomic Spectroscopy. 149 (2018) - p. 143-149 , 2018

Link: https://doi.org/10.1016/..

3

Transmission measurements of multilayer interference filter..:

Masarotto, L. ; Frey, L. ; Charles, M.L....
Thin Solid Films. 631 (2017) - p. 23-28 , 2017

Link: https://doi.org/10.1016/..

4

Atomistic mechanisms of copper filament formation and compo..:

Nail, C. ; Blaise, P. ; Molas, G....
Journal of Applied Physics. 122 (2017) 2 - p. , 2017

Link: https://doi.org/10.1063/..

5

Influence of water diffusion in deposited silicon oxides on..:

Desomberg, J. ; Fournel, F. ; Moriceau, H....
Microsystem Technologies. 24 (2017) 1 - p. 801-808 , 2017

Link: https://doi.org/10.1007/..

6

Material engineering of GexTe100−x compounds to improve pha..:

Navarro, G. ; Sousa, V. ; Persico, A....
Solid-State Electronics. 89 (2013) - p. 93-100 , 2013

Link: https://doi.org/10.1016/..

7

Lowering the Reset Current and Power Consumption of Phase-C..:

, In: 2012 4th IEEE International Memory Workshop,

Hubert, Q. ; Jahan, C. ; Toffoli, A.... - p. 1-4 , 2012

Link: https://doi.org/10.1109/..

8

Carbon-doped Ge2Sb2Te5 phase-change memory devices featurin..:

, In: 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC),

Hubert, Q. ; Jahan, C. ; Toffoli, A.... - p. 286-289 , 2012

Link: https://doi.org/10.1109/..

9

Impact of Oxidation on Ge2Sb2Te5and GeTe Phase-Change Prope..:

Gourvest, E. ; Pelissier, B. ; Vallée, C....
Journal of The Electrochemical Society. 159 (2012) 4 - p. H373-H377 , 2012

Link: https://doi.org/10.1149/..

10

GeTe phase change material and Ti based electrode: Study of..:

Loubriat, S. ; Muyard, D. ; Fillot, F....
Microelectronic Engineering. 88 (2011) 5 - p. 817-821 , 2011

Link: https://doi.org/10.1016/..

11

Comparative study of non-polar switching behaviors of NiO- ..:

Jousseaume, V. ; Fantini, A. ; Nodin, J.F....
Solid-State Electronics. 58 (2011) 1 - p. 62-67 , 2011

Link: https://doi.org/10.1016/..

12

Carbon-doped GeTe: A promising material for Phase-Change Me..:

Betti Beneventi, G. ; Perniola, L. ; Sousa, V....
Solid-State Electronics. 65-66 (2011) - p. 197-204 , 2011

Link: https://doi.org/10.1016/..

13

Effect of carbon doping on the structure of amorphous GeTe ..:

Ghezzi, G. E. ; Raty, J. Y. ; Maitrejean, S....
Applied Physics Letters. 99 (2011) 15 - p. , 2011

Link: https://doi.org/10.1063/..

14

Crystallization study of "melt quenched" amorphous GeTe by ..:

Bastard, A. ; Bastien, J. C. ; Hyot, B....
Applied Physics Letters. 99 (2011) 24 - p. 243103 , 2011

Link: https://doi.org/10.1063/..

15

Comparative study of non-polar switching behaviors of NiO- ..:

, In: 2010 IEEE International Memory Workshop,

Jousseaume, V. ; Feldis, H. ; Minoret, S.... - p. 1-4 , 2010

Link: https://doi.org/10.1109/..