Royer, C
2933  Ergebnisse:
Personensuche X
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4

Variable Iron Mineralogy and Redox Conditions Recorded in A..:

Mandon, L. ; Ehlmann, B. L. ; Wiens, R. C....
Journal of Geophysical Research: Planets.  129 (2024)  7 - p. , 2024
 
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5

Impact of Gate Morphology on Electrical Performances of Rec..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
 
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6

Carbonate Detection With SuperCam in Igneous Rocks on the F..:

Clavé, E. ; Benzerara, K. ; Meslin, P.‐Y....
Journal of Geophysical Research: Planets.  128 (2023)  6 - p. , 2023
 
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7

Deep Insights into Recessed Gate MOS-HEMT Technology for Po..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Mohamad, B. ; Royer, C. Le ; Rigaud-Minet, F.... - p. 1-3 , 2023
 
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8

Reflectance of Jezero Crater Floor: 1. Data Processing and ..:

Royer, C. ; Fouchet, T. ; Mandon, L....
Journal of Geophysical Research: Planets.  128 (2023)  1 - p. , 2023
 
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9

Reflectance of Jezero Crater Floor: 2. Mineralogical Interp..:

Mandon, L. ; Quantin‐Nataf, C. ; Royer, C....
Journal of Geophysical Research: Planets.  128 (2023)  7 - p. , 2023
 
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10

Comprehensive TCAD Analysis of Threshold Voltage on GaN-on-..:

Jaud, M. -A. ; Vandendaele, W. ; Rrustemi, B....
IEEE Transactions on Electron Devices.  69 (2022)  2 - p. 669-674 , 2022
 
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11

Role of free holes in nBTI degradation in GaN-on-Si MOS-cha..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Vandendaele, W. ; Jaud, M.-A. ; Viey, A. G.... - p. 345-348 , 2022
 
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12

Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits ..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Le Royer, C. ; Mohamad, B. ; Biscarrat, J.... - p. 49-52 , 2022
 
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13

Response of dimethylsulfoniopropionate (DMSP) and dimethyls..:

Royer, C ; Gypens, N ; Cardol, P...
Journal of Plankton Research.  43 (2021)  5 - p. 673-690 , 2021
 
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15

In depth TCAD analysis of threshold voltage on GaN-on-Si MO..:

, In: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Jaud, M. -A. ; Vandendaele, W. ; Rrustemi, B.... - p. 319-322 , 2021
 
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