Rudziński, M.
~ 300  Ergebnisse:
Personensuche X
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3

Improved bandwidth of a 2 THz hot-electron bolometer hetero..:

Antipov, S ; Trifonov, A ; Krause, S...
Superconductor Science and Technology.  32 (2019)  7 - p. 075003 , 2019
 
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4

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC:

Lemettinen, J. ; Okumura, H. ; Kim, I....
Journal of Crystal Growth.  487 (2018)  - p. 50-56 , 2018
 
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5

MOVPE growth of GaN on 6-inch SOI-substrates: effect of sub..:

Lemettinen, J ; Kauppinen, C ; Rudzinski, M...
Semiconductor Science and Technology.  32 (2017)  4 - p. 045003 , 2017
 
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7

Epitaxial growth of ultra-thin NbN films on AlxGa1−xN buffe..:

Krause, S ; Meledin, D ; Desmaris, V...
Superconductor Science and Technology.  27 (2014)  6 - p. 065009 , 2014
 
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8

Indium rich InGaN solar cells grown by MOCVD:

Çakmak, H. ; Arslan, Engin ; Rudziński, M....
Journal of Materials Science: Materials in Electronics.  25 (2014)  8 - p. 3652-3658 , 2014
 
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9

Non-polar and semi-polar ammonothermal GaN substrates:

Kucharski, R ; Zając, M ; Doradziński, R...
Semiconductor Science and Technology.  27 (2012)  2 - p. 024007 , 2012
 
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12

Transparency of GaN substrates in the mid‐infrared spectral..:

Welna, M. ; Kudrawiec, R. ; Motyka, M....
Crystal Research and Technology.  47 (2011)  3 - p. 347-350 , 2011
 
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13

Recent achievements in AMMONO-bulk method:

Dwiliński, R. ; Doradziński, R. ; Garczyński, J....
Journal of Crystal Growth.  312 (2010)  18 - p. 2499-2502 , 2010
 
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15

Homoepitaxy on bulk ammonothermal GaN:

Dwilinski, R. ; Doradzinski, R. ; Garczynski, J....
Journal of Crystal Growth.  311 (2009)  10 - p. 3058-3062 , 2009
 
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