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Rzepa, Gerhard
31  Ergebnisse:
Personensuche X
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1

An Efficient and Accurate DTCO Simulation Framework for Rel..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Karner, Markus ; Rzepa, Gerhard ; Schleich, Christian... - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
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2

Scaling Options for GAA Nanosheet Based Devices: Role of De..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Bhuwalka, Krishna K. ; Baumgartner, Oskar ; Wu, Hao... - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
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3

Multi-VT Options at Scaled Vertical Pitch in Gate-All-Aroun..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Gaddemane, Gautam ; Bhuwalka, Krishna ; Rzepa, Gerhard... - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
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4

Inflection Points in Cfet Scaling: Impact of Dtco Boosters:

, In: 2024 Conference of Science and Technology for Integrated Circuits (CSTIC),
Yakimets, Dmitry ; Bhuwalka, Krishna K. ; Wu, Hao... - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
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5

Overview of emerging semiconductor device model methodologi..:

Li, Xufan ; Wu, Zhenhua ; Rzepa, Gerhard...
Fundamental Research.  , 2024
Link: https://doi.org/10.1016/..
 
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6

DTCO of Nanosheet and Forksheet Architectures: Exploring Di..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Gaddemane, Gautam ; Schuddinck, Pieter ; Bhuwalka, Krishna... - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
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7

Inflection Points in GAA NS-FET to C-FET Scaling Considerin..:

Yakimets, Dmitry ; Bhuwalka, Krishna K. ; Wu, Hao...
IEEE Transactions on Electron Devices.  71 (2024)  4 - p. 2309-2314 , 2024
Link: https://doi.org/10.1109/..
 
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8

DTCO flow for air spacer generation and its impact on power..:

Filipovic, Lado ; Baumgartner, Oskar ; Klemenschits, Xaver...
Solid-State Electronics.  199 (2023)  - p. 108527 , 2023
Link: https://doi.org/10.1016/..
 
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9

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFE..:

Vasilev, Aleksandr ; Feil, Maximilian Wolfgang ; Schleich, Christian...
Materials Science Forum.  1090 (2023)  - p. 119-126 , 2023
Link: https://doi.org/10.4028/..
 
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10

Comphy v3.0—A compact-physics framework for modeling charge..:

Waldhoer, Dominic ; Schleich, Christian ; Michl, Jakob...
Microelectronics Reliability.  146 (2023)  - p. 115004 , 2023
Link: https://doi.org/10.1016/..
 
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11

TCAD Modeling of Temperature Activation of the Hysteresis C..:

Vasilev, Alexander ; Jech, Markus ; Grill, Alexander...
IEEE Transactions on Electron Devices.  69 (2022)  6 - p. 3290-3295 , 2022
Link: https://doi.org/10.1109/..
 
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12

Co-integration Process Compatible Input/Output (I/O) Device..:

, In: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC),
Gaddemane, Gautam ; Bhuwalka, Krishna K. ; Matagne, Philippe... - p. 265-268 , 2022
Link: https://doi.org/10.1109/..
 
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13

Optimization and Benchmarking FinFETs and GAA Nanosheet Arc..:

Bhuwalka, Krishna K. ; Wu, Hao ; Zhao, Wenbo...
IEEE Transactions on Electron Devices.  69 (2022)  8 - p. 4088-4094 , 2022
Link: https://doi.org/10.1109/..
 
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14

Performance and Variability-Aware SRAM Design for Gate-All-..:

, In: 2022 International Electron Devices Meeting (IEDM),
Rzepa, Gerhard ; Bhuwalka, Krishna K. ; Baumgartner, Oskar... - p. 15.1.1-15.1.4 , 2022
Link: https://doi.org/10.1109/..
 
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15

Impact of single-defects on the variability of CMOS inverte..:

Waltl, Michael ; Waldhoer, Dominic ; Tselios, Konstantinos...
Microelectronics Reliability.  126 (2021)  - p. 114275 , 2021
Link: https://doi.org/10.1016/..
 
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