Sadwick, L.P.
27  Ergebnisse:
Personensuche X
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1

Chemical beam epitaxial growth of GaInP using uncracked tri..:

Ryu, H. H. ; Jeon, M. H. ; Leem, J. Y....
Journal of Materials Science.  41 (2006)  24 - p. 8265-8270 , 2006
 
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2

500oC Electronics for Harsh Environments:

, In: 2005 IEEE Aerospace Conference,
Sadwick, L.P. ; Hwu, R.J. ; Chern, J.H.... - p. 1-11 , 2005
 
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3

Formation of microtwins in TmP/GaAs heterostructures:

Lin, C.H. ; Hwu, R.J. ; Sadwick, L.P.
Journal of Crystal Growth.  247 (2003)  1-2 - p. 77-83 , 2003
 
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4

Investigation of crystal properties of TmP/GaAs and GaAs/Tm..:

Lin, C. H. ; Hwu, R. J. ; Sadwick, L. P.
Journal of Materials Research.  16 (2001)  11 - p. 3266-3273 , 2001
 
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5

Magnetization-controlled spin transport in DyAs/GaAs layers:

Mao, J. M. ; Zudov, M. E. ; Du, R. R....
Journal of Applied Physics.  87 (2000)  9 - p. 5170-5172 , 2000
 
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6

Magnetic properties of DyAs and DyP (001) films:

Rush, E. ; Wu, L. ; Tsui, F....
Journal of Applied Physics.  85 (1999)  8 - p. 4970-4972 , 1999
 
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7

Epitaxial growth and characterization of DyP/GaAs, DyAs/GaA..:

Lee, P. P. ; Hwu, R. J. ; Sadwick, L. P....
Journal of Electronic Materials.  27 (1998)  5 - p. 405-408 , 1998
 
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8

Growth and characterization of DyP/GaAs and DyAs/GaAs-based..:

Lee, P.P. ; Hwu, R.J. ; Sadwick, L.P....
Physica E: Low-dimensional Systems and Nanostructures.  2 (1998)  1-4 - p. 358-362 , 1998
 
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11

Structural and electrical characterization of epitaxial DyP..:

, In: Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors,
Lee, P.P. ; Hwu, R.J. ; Sadwick, L.P.... - p. 159,160,161,162 , 1997
 
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13

Epitaxial dysprosium phosphide grown by gas-source and soli..:

Sadwick, L.P. ; Lee, P.P. ; Patel, M....
Journal of Crystal Growth.  164 (1996)  1-4 - p. 285-290 , 1996
 
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14

CBE growth of InP using BPE and TBP: a comparative study:

Kim, C.W. ; Stringfellow, G.B. ; Sadwick, L.P.
Journal of Crystal Growth.  164 (1996)  1-4 - p. 104-111 , 1996
 
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