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Saito, Wataru
1690  Ergebnisse:
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1

A Future Outlook of Power Devices From the Viewpoint of Pow..:

Saito, Wataru
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1356-1364 , 2024
Link: https://doi.org/10.1109/..
 
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2

Power-cycling degradation monitoring of an IGBT module with..:

Hasegawa, Kazunori ; Hara, Kanta ; Shishido, Nobuyuki...
Power Electronic Devices and Components.  7 (2024)  - p. 100061 , 2024
Link: https://doi.org/10.1016/..
 
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3

Turn-off switching voltage surge analysis with dependence o..:

Fujimoto, Yuri ; Nishizawa, Shin-ichi ; Saito, Wataru
Japanese Journal of Applied Physics.  63 (2024)  2 - p. 02SP36 , 2024
Link: https://doi.org/10.35848..
 
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4

Study on stress in trench structures during silicon IGBTs p..:

Cai, Bozhou ; Yuan, Jiuyang ; Miyamura, Yoshiji..
Japanese Journal of Applied Physics.  63 (2024)  3 - p. 03SP16 , 2024
Link: https://doi.org/10.35848..
 
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5

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode..:

Takamori, Taro ; Wada, Keiji ; Saito, Wataru.
IEEE Open Journal of Power Electronics.  5 (2024)  - p. 392-401 , 2024
Link: https://doi.org/10.1109/..
 
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6

Robust reverse bias safe operating area and improved electr..:

Zhou, Xiang ; Fukui, Munetoshi ; Takeuchi, Kiyoshi...
Japanese Journal of Applied Physics.  63 (2024)  2 - p. 02SP57 , 2024
Link: https://doi.org/10.35848..
 
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7

Mechanism of gate voltage spike under digital gate control ..:

Lou, Zaiqi ; Mamee, Thatree ; Hata, Katsuhiro...
Power Electronic Devices and Components.  7 (2024)  - p. 100054 , 2024
Link: https://doi.org/10.1016/..
 
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8

Overvoltage Failure Process of Cascode GaN Field Effect Tra..:

Saito, Wataru ; Nishizawa, Shin‐ichi
physica status solidi (a).  , 2024
Link: https://doi.org/10.1002/..
 
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9

Impact of p-Gate Contact in GaN-HEMTs on Overvoltage Stress..:

Saito, Wataru ; NIshizawa, Shin-Ichi
IEEE Transactions on Electron Devices.  71 (2024)  6 - p. 3590-3595 , 2024
Link: https://doi.org/10.1109/..
 
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10

Adjustable Current Limiting Function With a Monolithically ..:

Takamori, Taro ; Wada, Keiji ; Boettcher, Norman...
IEEE Transactions on Industry Applications.  59 (2023)  5 - p. 6427-6435 , 2023
Link: https://doi.org/10.1109/..
 
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11

The design considerations of stray inductance for power mod..:

Lou, Zaiqi ; Mamee, Thatree ; Hata, Katsuhiro...
Power Electronic Devices and Components.  6 (2023)  - p. 100047 , 2023
Link: https://doi.org/10.1016/..
 
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12

Automatic total performance design of low-voltage power MOS..:

Saito, Wataru
Japanese Journal of Applied Physics.  62 (2023)  SC - p. SC0803 , 2023
Link: https://doi.org/10.35848..
 
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13

Effects of Oxygen on Lattice Defects in Single-Crystalline ..:

Hayashi, Kei ; Kawamura, Sota ; Hashimoto, Yusuke...
Nanomaterials.  13 (2023)  7 - p. 1222 , 2023
Link: https://doi.org/10.3390/..
 
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14

Stability, Reliability, and Robustness of GaN Power Devices..:

Kozak, Joseph Peter ; Zhang, Ruizhe ; Porter, Matthew...
IEEE Transactions on Power Electronics.  38 (2023)  7 - p. 8442-8471 , 2023
Link: https://doi.org/10.1109/..
 
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15

Intraoperative Blood Loss at Different Surgical-Procedure S..:

Shirasawa, Eiki ; Saito, Wataru ; Miyagi, Masayuki...
Medicina.  59 (2023)  2 - p. 387 , 2023
Link: https://doi.org/10.3390/..
 
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