Salmen, Paul
117  Ergebnisse:
Personensuche X
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1

Gate Switching Instability in Silicon Carbide MOSFETs—Part ..:

Feil, Maximilian W. ; Waschneck, Katja ; Reisinger, Hans...
IEEE Transactions on Electron Devices.  71 (2024)  7 - p. 4210-4217 , 2024
 
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2

Towards Understanding the Physics of Gate Switching Instabi..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
 
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4

Recent Developments in Understanding the Gate Switching Ins..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),
 
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5

SiC MOSFET threshold voltage stability during power cycling..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
 
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8

New Approach to Structure–Property Correlations of Differen..:

Demand, Sarah ; Egger, Simon ; Degen, Patrick...
Journal of Surfactants and Detergents.  22 (2019)  3 - p. 597-611 , 2019
 
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11

Human Apolipoprotein A1 at Solid/Liquid and Liquid/Gas Inte..:

Dogan, Susanne ; Paulus, Michael ; Forov, Yury...
The Journal of Physical Chemistry B.  122 (2018)  14 - p. 3953-3960 , 2018
 
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13

Röntgenreflektometrie an der hydrophoben Festköper-Flüss.. 

Untersuchungen an organischen Lösungsmitteln und Proteinad... 
Salmen, Paul , 2017
 
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